2SK4012(Q) Toshiba

2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK4012 Switching Regulator Applications Unit: mm z Low drain source ON-resistance : R = 0.33 (typ.) DS (ON) z High forward transfer admittance : Y = 8.5 S (typ.) fs z Low leakage current : I = 100 A (max) (V = 500 V) DSS DS z Enhancement mode : V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain source voltage V 500 V DSS Drain gate voltage (R = 20 k ) V 500 V GS DGR Gatesource voltage V 30 V GSS DC (Note 1) I 13 A D Drain current Pulse (Note 1) I 52 A 1: Gate DP 2: Drain Drain power dissipation (Tc = 25C) P 45 W D 3: Source Single-pulse avalanche energy E 1170 mJ JEDEC AS (Note 2) JEITA SC-67 Avalanche current I 13 A AR Repetitive avalanche energy (Note 3) E 4.5 mJ TOSHIBA 2-10U1B AR Channel temperature T 150 C ch Weight: 1.7 (typ.) Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristic Symbol Max Unit Thermal resistance, channel to case R 2.78 C / W th (chc) Thermal resistance, channel to ambient R 62.5 C / W th (cha) 1 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: V = 90 V, T = 25C (initial), L = 11.8 mH, R = 25 , I = 13 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature 3 This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 2SK4012 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 25 V, V = 0 V 10 A GSS GS DS Gatesource breakdown voltage V I = 10 A, V = 0 V 30 V (BR) GSS G DS Drain cutoff current I V = 500 V, V = 0 V 100 A DSS DS GS Drain source breakdown voltage V I = 10 mA, V = 0 V 500 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain source ON-resistance R V = 10 V, I = 6.5 A 0.33 0.4 DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 6.5 A 4.0 8.5 S fs DS D Input capacitance C 2400 iss Reverse transfer capacitance C V = 25 V, V = 0 V, f = 1 MHz 18 pF rss DS GS Output capacitance C 220 oss 10 V I = 6.5 A V D OUT Rise time t 25 r V GS 0 V R = Turn on time t 70 on L 15 31 Switching time ns Fall time t 10 f V 200 V DD Duty 1%, t = 10 s w Turn off time t 95 off Total gate charge (gatesource Q 50 g plus gate drain) V 400 V, V = 10 V, I = 13 A nC DD GS D Gatesource charge Q 30 gs Gatedrain (Miller) charge Q 20 gd SourceDrain Ratings and Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 13 A DR (Note 1) Pulse drain reverse current I 52 A DRP (Note 1) Forward voltage (diode) V I = 13 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t 1000 ns rr I = 13 A, V = 0 V DR GS dI / dt = 100 A / s DR Reverse recovery charge Q 11 C rr Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to K4012 Part No. (or abbreviation code) Lot No. environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament Note 4 and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29