2SK3746-1E ON Semiconductor

Ordering number : EN8283A 2SK3746 N-Channel Power MOSFET 2SK3746 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 1500 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =1200V, V =0V 100 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 2.5 3.5 V GS DS D Forward Transfer Admittance yfs V =20V, I =1A 0.7 1.4 S DS D Static Drain-to-Source On-State Resistance R (on) I =1A, V =10V 10 13 DS D GS Input Capacitance Ciss 380 pF Output Capacitance Coss V =30V, f=1MHz 70 pF DS Reverse Transfer Capacitance Crss 40 pF Turn-ON Delay Time t (on) 12 ns d Rise Time t 37 ns r See Fig.2 Turn-OFF Delay Time t (off) 152 ns d Fall Time t 59 ns f Total Gate Charge Qg 37.5 nC Gate-to-Source Charge Qgs V =200V, V =10V, I =2A 2.7 nC DS GS D Gate-to-Drain Miller Charge Qgd 20 nC Diode Forward Voltage V I =2A, V =0V 0.88 1.2 V SD S GS Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V V =200V IN DD L r 507 10V RG 0V I =1A D V IN R =200 L 2SK3746 D V 10V OUT V 507 DD PW=10 s 0V D.C.0.5% G 2SK3746 P.G S R =50 GS Ordering Information Device Package Shipping memo 2SK3746-1E TO-3P-3L 30pcs./magazine Pb Free No.8283-2/7