2SK3745LS-1E ON Semiconductor

Ordering number : EN8635A 2SK3745LS N-Channel Power MOSFET 2SK3745LS Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 1500 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =1200V, V =0V 100 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 2.5 3.5 V GS DS D Forward Transfer Admittance yfs V =20V, I =1A 0.7 1.4 S DS D Static Drain-to-Source On-State Resistance R (on) I =1A, V =10V 10 13 DS D GS Input Capacitance Ciss 380 pF Output Capacitance Coss V =30V, f=1MHz 70 pF DS Reverse Transfer Capacitance Crss 40 pF Turn-ON Delay Time t (on) 12 ns d Rise Time t 37 ns r See Fig.2 Turn-OFF Delay Time t (off) 152 ns d Fall Time t 59 ns f Total Gate Charge Qg 37.5 nC Gate-to-Source Charge Qgs V =200V, V =10V, I =2A 2.7 nC DS GS D Gate-to-Drain Miller Charge Qgd 20 nC Diode Forward Voltage V I =2A, V =0V 0.88 1.2 V SD S GS Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V V =200V DD IN L 10V 50 0V RG I =1A D V IN R =200 L DUT D V OUT PW=10s 10V 50 V D.C.0.5% DD 0V G 2SK3745LS P.G S R =50 GS Ordering Information Device Package Shipping memo 2SK3745LS-1E TO-220F-3FS 50pcs./magazine Pb Free No.8635-2/7