Ordering number : EN7681B 2SK3703 N-Channel Power MOSFET 2SK3703 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =15A 13 22 S DS D R (on)1 I =15A, V =10V 20 26 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =15A, V =4V 28 40 m DS D GS Input Capacitance Ciss 1780 pF Output Capacitance Coss V =20V, f=1MHz 266 pF DS Reverse Transfer Capacitance Crss 197 pF Turn-ON Delay Time t (on) 16.5 ns d Rise Time t 110 ns r See Fig.2 Turn-OFF Delay Time t (off) 166 ns d Fall Time t 144 ns f Total Gate Charge Qg 40 nC Gate-to-Source Charge Qgs V =30V, V =10V, I =30A 6.5 nC DS GS D Gate-to-Drain Miller Charge Qgd 11.5 nC Diode Forward Voltage V I =30A, V =0V 1.0 1.2 V SD S GS Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V V =30V DD IN L 10V 0V 50 I =15A D V IN R =2 L D 2SK3703 V OUT PW=10s 10V 50 V D.C.1% DD 0V G 2SK3703 P.G 50 S Ordering Information Device Package Shipping memo 2SK3703-1E TO-220F-3SG 50pcs./magazine Pb Free No.7681-2/7