Data Sheet 10V Drive Nch MOSFET R5019ANX Structure Dimensions (Unit : mm) TO-220FM Silicon N-channel MOSFET 3.2 10.0 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate (2) Drain 2.54 2.54 0.75 2.6 ( ) ()( ) 1 2 3 (3) Source Application Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering unit (pieces) 500 R5019ANX (1) (2) (3) (1) Gate Absolute maximum ratings (Ta = 25 C) (2) Drain (3) Source 1 BODY DIODE Parameter Symbol Limits Unit Drain-source voltage V 500 V DSS Gate-source voltage V 30 V GSS *3 Continuous I 19 A D Drain current *1 Pulsed I A 76 DP *3 Source current Continuous I 19 A S (Body Diode) Pulsed *1 I A SP 76 Avalanche current I *2 9.5 A AS *2 Avalanche energy E 24.3 mJ AS *4 Power dissipation P 50 W D Channel temperature T 150 C ch Range of storage temperature T 55 to 150 C stg *1 Pw10s, Duty cycle1% *2 L 500H, V =50V, R =25, T =25C DD G ch *3 Limited only by maximum temperature allowed. *4 T =25C C Thermal resistance Parameter Symbol Limits Unit Channel to Case R 2.5 C / W th (ch-c) www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/5 14.0 15.0 12.0 2.5 8.0Data Sheet R5019ANX Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 100 nA V = 30V, V =0V GSS GS DS Drain-source breakdown voltage V 500 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I - - 100 AV =500V, V =0V DSS DS GS Gate threshold voltage V 2.5 - 4.5 V V =10V, I =1mA GS (th) DS D Static drain-source on-state * R I =9.5A, V =10V - 0.18 0.24 DS (on) D GS resistance * Forward transfer admittance l Y l 6.5 - - S V =10V, I =9.5A fs DS D Input capacitance C - 2050 - pF V =25V iss DS Output capacitance C - 1200 - pF V =0V oss GS Reverse transfer capacitance C - 50 - pF f=1MHz rss Turn-on delay time t - 40 - ns V 250V, I =9.5A d(on) * DD D Rise time t - 115 - ns V =10V r * GS Turn-off delay time t - 165 - ns R =26.3 d(off) L * Fall time t - 100 - ns R =10 f * G Total gate charge Q - 55 - nC V 250V g * DD Gate-source charge Q - 10 - nC I =19A * gs D Gate-drain charge Q - 24 - nC V =10V gd GS * *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.5 V I =19A, V =0V SD S GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A