X-On Electronics has gained recognition as a prominent supplier of R5016FNJTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. R5016FNJTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R5016FNJTL ROHM

R5016FNJTL electronic component of ROHM
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See Product Specifications
Part No.R5016FNJTL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: R5016FNJTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.531 ea
Line Total: USD 3.53 
Availability - 919
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
919
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.531
10 : USD 3.003
25 : USD 2.882
100 : USD 2.541
250 : USD 2.398
500 : USD 2.288
1000 : USD 2.024
2000 : USD 2.013
5000 : USD 1.936

97
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 37
Multiples : 1
37 : USD 2.6626
50 : USD 2.5613
100 : USD 2.4743

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the R5016FNJTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R5016FNJTL and other electronic components in the MOSFETs category and beyond.

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R5016FNJ Datasheet Nch 500V 16A Power MOSFET llOutline TO-263 V 500V DSS SC-83 R (Max.) 0.325 DS(on) LPT(S) I 16A D P 255W D llInner circuit llFeatures 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (V ) guaranteed to GSS be 30V. 5) Drive circuits can be simple. 6) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Power Supply Basic ordering unit (pcs) 1000 Taping code TL Marking R5016FNJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 500 V DSS *1 T = 25C I 16 A C D Continuous drain current *1 T = 100C I 7.6 A C D *2 I Pulsed drain current 64 A DP V Gate - Source voltage 30 V GSS *3 I Avalanche current, single pulse 8.0 A AS *3 E Avalanche energy, single pulse 17.1 mJ AS *4 E Avalanche energy, repetitive 3.5 mJ AR Power dissipation (T = 25C) P 255 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg Reverse diode dv/dt dv/dt 15 V/ns www.rohm.com 1/13 20160324 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs R5016FNJ Datasheet llAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 400V, I = 16A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125 j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 0.49 /W thJC Thermal resistance, junction - ambient R - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 500 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 8A - 580 - V (BR)DS GS D breakdown voltage V = 500V, V = 0V DS GS Zero gate voltage T = 25C I - 1 100 A DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 30V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3 - 5 V GS(th) DS D V = 10V, I = 8.0A GS D Static drain - source *6 R T = 25C - 0.25 0.325 j DS(on) on - state resistance T = 125C - 0.53 - j R Gate resistance f = 1MHz, open drain - 10 - G www.rohm.com 2/13 2016 ROHM Co., Ltd. All rights reserved. 20160324 - Rev.002 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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