10V Drive Nch MOSFET R5016ANJ z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 z Features 1) Low on-resistance. 1.24 2) Fast switching speed. 3) Wide SOA (safe operating area). 2.54 0.4 0.78 4) Gate-source voltage (V 2.7 GSS) guaranteed to be 30V. 5.08 (1) Base (Gate) (1) (2) (3) 5) Drive circuits can be simple. (2) Collector (Drain) 6) Parallel use is easy. (3) Emitter (Source) Each lead has same dimensions z Applications z Inner circuit Switching z Packaging specifications 1 Package Taping Code TL 1000 Type Basic ordering unit (pieces) R5016ANJ (1) (2) (3) (1) Gate (2) Drain 1 Body Diode (3) Source z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS 30 V 3 Continuous ID 16 A Drain current 1 Pulsed 64 IDP A 3 Continuous 16 IS A Source current 1 (Body Diode) Pulsed 64 ISP A 2 Avalanche Current IAS 8 A 2 Avalanche Energy EAS 18 mJ Total power dissipation (Tc=25C) PD 100 W Channel temperature Tch 150 C Range of storage temperature 55 to +150 Tstg C 1 Pw10s, Duty cycle1% 2 L 500H, VDD=50V, RG=25, Starting, Tch=25C 3 Limited only by maximum tempterature allowed z Thermal resistance Parameter Symbol Limits Unit Channel to case Rth(ch-c) 1.25 C/W www.rohm.com c 2009.02 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 1/5 13.1 3.0 9.0 1.0 1.2 R5016ANJ Data Sheet z Electrical characteristics (Ta=25C) Parameter Symbol Min. Max. Unit Conditions Typ. Gate-source leakage IGSS 100 nA VGS=30V, VDS=0V Drain-source breakdown voltage V(BR)DSS 500 V ID=1mA, VGS=0V Zero gate voltage drain current IDSS 100 A VDS=500V, VGS=0V Gate threshold voltage VGS(th) 2.5 4.5 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS(on) 0.27 ID=8A, VGS=10V 0.21 Forward transfer admittance Yfs 6.0 S ID=8A, VDS=10V Input capacitance Ciss pF VDS=25V 1800 Coss pF VGS=0V Output capacitance 750 Reverse transfer capacitance Crss 55 pF f=1MHz Turn-on delay time td(on) 40 ns ID=8A, VDD 250V Rise time tr ns VGS=10V 50 Turn-off delay time td(off) ns RL=31.3 150 tf ns RG=10 Fall time 55 Qg nC VDD 250V Total gate charge 50 ID=16A Gate-source charge Qgs nC 9.5 VGS=10V RL=15.6 / R G=10 Gate-drain charge Qgd nC 21 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.5 V IS= 16A, VGS=0V Pulsed www.rohm.com c 2009.02 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 2/5