R5005CNJTL ROHM

Data Sheet 10V Drive Nch MOSFET R5005CNJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) High-speed switching. 2.54 0.4 0.78 3) Wide range of SOA. 5.08 2.7 (1) Gate (1) (2) (3) 4) Drive circuits can be simple. (2) Drain (3) Source 5) Parallel use is easy. Application Switching Packaging specifications Inner circuit 1 Package Taping Type Code TL Basic ordering unit (pieces) 1000 2 R5005CNJ (1) Gate (1) (2) (3) (2) Drain 1 ESD PROTECTION DIODE Absolute maximum ratings (Ta = 25 C) (3) Source 2 BODY DIODE Parameter Symbol Limits Unit Drain-source voltage V 500 V DSS Gate-source voltage V 30 V GSS Continuous I *3 5A D Drain current *1 Pulsed I 20 A DP Continuous I *3 5A Source current S (Body Diode) Pulsed I 20 A *1 SP Avalanche current I 2.5 A *2 AS Avalanche energy E *2 1.6 mJ AS Power dissipation P *4 40 W D Channel temperature T 150 C ch Range of storage temperature T 55 to 150 C stg *1 Pw10s, Duty cycle1% *2 L 500H, V =50V, R =25, T =25C DD G ch *3 Limited only by maximum temperature allowed. *4 T =25C C Thermal resistance Parameter Symbol Limits Unit Channel to Case R 3.125 C / W th (ch-c) www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/5 13.1 3.0 9.0 1.0 1.2Data Sheet R5005CNJ Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 25V, V =0V GSS GS DS Drain-source breakdown voltage V 500 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I - - 100 AV =500V, V =0V DSS DS GS Gate threshold voltage V 2.5 - 4.5 V V =10V, I =1mA GS (th) DS D Static drain-source on-state R I =2.5A, V =10V * - 1.3 1.6 DS (on) D GS resistance * Forward transfer admittance l Y l 1.5 2.7 - S V =10V, I =2.5A fs DS D Input capacitance C - 320 - pF V =25V iss DS Output capacitance C - 180 - pF V =0V oss GS Reverse transfer capacitance C - 15 - pF f=1MHz rss Turn-on delay time t - 20 - ns V 250V, I =2.5A * d(on) DD D Rise time t - 25 - ns V =10V r * GS Turn-off delay time t - 40 - ns R =100 d(off) * L Fall time t * - 20 - ns R =10 f G Total gate charge Q - 10.8 - nC V 250V * g DD Gate-source charge Q * - 3.2 - nC I =5.0A gs D Gate-drain charge Q - 4.4 - nC V =10V gd * GS *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.5 V I =5.0A, V =0V SD S GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A