10V Drive Nch MOSFET R5007ANJ z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 z Features 1) Low on-resistance. 1.24 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.4 2.54 0.78 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5.08 2.7 (1) Base (Gate) (1) (2) (3) 5) Drive circuits can be simple. (2) Collector (Drain) 6) Parallel use is easy. (3) Emitter (Source) Each lead has same dimensions z Applications z Inner circuit Switching 1 z Packaging specifications Package Taping Code TL (1) (2) (3) Type Basic ordering unit (pieces) 1000 (1) Gate (2) Drain R5007ANJ 1 Body Diode (3) Source z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Drain-source voltage 500 VDSS V Gate-source voltage VGSS 30 V 3 Continuous ID 7 A Drain current 1 Pulsed IDP 28 A 3 Continuous IS 7 A Source current 1 (Body Diode) Pulsed ISP 28 A 2 Avalanche Current IAS 3.5 A 2 Avalanche Energy EAS 3.5 mJ Total power dissipation (Tc=25C) PD 40 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 L 500H, VDD=50V, RG=25, Starting, Tch=25C 3 Limited only by maximum tempterature allowed z Thermal resistance Parameter Symbol Limits Unit Channel to case Rth(ch-c) 3.13 C/W www.rohm.com c 2009.02 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 1/5 13.1 3.0 9.0 1.0 1.2 R5007ANJ Data Sheet z Electrical characteristics (Ta=25C) Parameter Symbol Min. Max. Unit Conditions Typ. Gate-source leakage IGSS 100 nA VGS=30V, VDS=0V Drain-source breakdown voltage V(BR)DSS 500 V ID=1mA, VGS=0V Zero gate voltage drain current IDSS 100 A VDS=500V, VGS=0V Gate threshold voltage VGS(th) 2.5 4.5 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS(on) 1.05 ID=3.5A, VGS=10V 0.8 Forward transfer admittance Yfs 2.5 S ID=3.5A, VDS=10V Input capacitance Ciss pF VDS=25V 500 Coss pF VGS=0V Output capacitance 300 Reverse transfer capacitance Crss 23 pF f=1MHz Turn-on delay time td(on) 20 ns ID=3.5A, VDD 250V Rise time tr ns VGS=10V 22 Turn-off delay time td(off) ns RL=71.4 50 tf ns RG=10 Fall time 25 Qg nC VDD 250V Total gate charge 13 ID=7A Gate-source charge Qgs nC 3.5 VGS=10V RL=35.7 / R G=10 Gate-drain charge Qgd nC 5.5 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.5 V IS= 7A, VGS=0V Pulsed www.rohm.com c 2009.02 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 2/5