X-On Electronics has gained recognition as a prominent supplier of R5009ANJTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. R5009ANJTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R5009ANJTL ROHM

R5009ANJTL electronic component of ROHM
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Part No.R5009ANJTL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) LPTS T/R
Datasheet: R5009ANJTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
27: USD 1.4964 ea
Line Total: USD 40.4 
Availability - 0
MOQ: 27  Multiples: 1
Pack Size: 1
Availability Price Quantity
97
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 67
Multiples : 1
67 : USD 1.6712
100 : USD 1.5964

   
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Power Dissipation
Mounting
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Gate-Source Voltage Max
Polarity
Drain-Source On-Volt
Number Of Elements
Package Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the R5009ANJTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R5009ANJTL and other electronic components in the MOSFETs category and beyond.

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10V Drive Nch MOSFET R5009ANJ z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 z Features 1) Low on-resistance. 1.24 2) Fast switching speed. 3) Wide SOA (safe operating area). 2.54 0.4 0.78 2.7 4) Gate-source voltage (V 5.08 GSS) guaranteed to be 30V. (1) Base (Gate) (1) (2) (3) 5) Drive circuits can be simple. (2) Collector (Drain) (3) Emitter (Source) 6) Parallel use is easy. Each lead has same dimensions z Applications z Inner circuit Switching 1 z Packaging specifications Package Taping Code TL Type Basic ordering unit (pieces) 1000 (1) (2) (3) (1) Gate R5009ANJ (2) Drain 1 Body Diode (3) Source z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Drain-source voltage 500 VDSS V Gate-source voltage VGSS 30 V 3 Continuous ID 9 A Drain current 1 Pulsed IDP 36 A Continuous IS 9 A Source current 1 (Body Diode) Pulsed ISP 36 A 2 Avalanche Current IAS 4.5 A 2 Avalanche Energy EAS 5.4 mJ Total power dissipation (Tc=25C) PD 50 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 L 500H, VDD=50V, RG=25, Starting, Tch=25C 3 Limited only by maximum tempterature allowed z Thermal resistance Parameter Symbol Limits Unit Channel to case Rth(ch-c) 2.5 C/W www.rohm.com c 2009.02 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 1/5 13.1 3.0 9.0 1.0 1.2 R5009ANJ Data Sheet z Electrical characteristics (Ta=25C) Parameter Symbol Min. Max. Unit Conditions Typ. Gate-source leakage IGSS 100 nA VGS=30V, VDS=0V Drain-source breakdown voltage V(BR)DSS 500 V ID=1mA, VGS=0V Zero gate voltage drain current IDSS 100 A VDS=500V, VGS=0V Gate threshold voltage VGS(th) 2.5 4.5 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS(on) 0.72 ID=4.5A, VGS=10V 0.55 Forward transfer admittance | Yfs | 2.5 S ID=4.5A, VDS=10V Input capacitance Ciss pF VDS=25V 650 Coss pF VGS=0V Output capacitance 400 Reverse transfer capacitance Crss 30 pF f=1MHz Turn-on delay time td(on) 30 ns ID=4.5A, VDD 250V Rise time tr ns VGS=10V 20 Turn-off delay time td(off) ns RL=55.6 62 tf ns RG=10 Fall time 28 Qg nC VDD 250V Total gate charge 21 ID=9A Gate-source charge Qgs nC 5 VGS=10V RL=27.8 / R G=10 Gate-drain charge Qgd nC 9 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.5 V IS= 9A, VGS=0V Pulsed www.rohm.com c 2009.02 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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