10V Drive Nch MOSFET
R5009ANJ
z Structure z Dimensions (Unit : mm)
Silicon N-channel MOSFET
LPTS
10.1
4.5
1.3
z Features
1) Low on-resistance.
1.24
2) Fast switching speed.
3) Wide SOA (safe operating area).
2.54 0.4
0.78
2.7
4) Gate-source voltage (V 5.08
GSS) guaranteed to be 30V.
(1) Base (Gate) (1) (2) (3)
5) Drive circuits can be simple.
(2) Collector (Drain)
(3) Emitter (Source)
6) Parallel use is easy.
Each lead has same dimensions
z Applications z Inner circuit
Switching
1
z Packaging specifications
Package Taping
Code TL
Type Basic ordering unit (pieces) 1000
(1) (2) (3)
(1) Gate
R5009ANJ
(2) Drain
1 Body Diode
(3) Source
z Absolute maximum ratings (Ta=25C)
Parameter Limits
Symbol Unit
Drain-source voltage 500
VDSS V
Gate-source voltage VGSS 30 V
3
Continuous ID 9 A
Drain current
1
Pulsed IDP 36 A
Continuous IS 9 A
Source current
1
(Body Diode)
Pulsed ISP 36 A
2
Avalanche Current IAS 4.5 A
2
Avalanche Energy EAS 5.4 mJ
Total power dissipation (Tc=25C) PD 50 W
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C
1 Pw10s, Duty cycle1%
2 L 500H, VDD=50V, RG=25, Starting, Tch=25C
3 Limited only by maximum tempterature allowed
z Thermal resistance
Parameter Symbol Limits Unit
Channel to case Rth(ch-c) 2.5 C/W
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c 2009.02 - Rev.A
2009 ROHM Co., Ltd. All rights reserved. 1/5
13.1
3.0 9.0
1.0
1.2
R5009ANJ Data Sheet
z Electrical characteristics (Ta=25C)
Parameter Symbol Min. Max. Unit Conditions
Typ.
Gate-source leakage IGSS 100 nA VGS=30V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 500 V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS 100 A VDS=500V, VGS=0V
Gate threshold voltage VGS(th) 2.5 4.5 V VDS=10V, ID=1mA
Static drain-source on-state resistance RDS(on) 0.72 ID=4.5A, VGS=10V
0.55
Forward transfer admittance | Yfs | 2.5 S ID=4.5A, VDS=10V
Input capacitance Ciss pF VDS=25V
650
Coss pF VGS=0V
Output capacitance 400
Reverse transfer capacitance Crss 30 pF f=1MHz
Turn-on delay time td(on) 30 ns ID=4.5A, VDD 250V
Rise time tr ns VGS=10V
20
Turn-off delay time td(off) ns RL=55.6
62
tf ns RG=10
Fall time 28
Qg nC VDD 250V
Total gate charge 21
ID=9A
Gate-source charge Qgs nC
5
VGS=10V
RL=27.8 / R G=10
Gate-drain charge Qgd nC
9
Pulsed
z Body diode characteristics (Source-drain) (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VSD 1.5 V IS= 9A, VGS=0V
Pulsed
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c 2009.02 - Rev.A
2009 ROHM Co., Ltd. All rights reserved. 2/5