CPH6354 Power MOSFET www.onsemi.com 60V, 100m , 4A, Single P-Channel Features ON-resistance R (on)1=77m(typ.) DS 4V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Value Unit Drain-to-Source Voltage V --60 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I --4 A D Drain Current (Pulse) I PW 10 s, duty cycle 1% --16 A m DP 2 Power Dissipation P When mounted on ceramic substrate (1500mm 0.8mm) 1.6 W D Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient R 78.1 C/W JA 2 When mounted on ceramic substrate (1500mm 0.8mm) Package Dimensions Product & Package Information Package : CPH6 unit : mm (typ) 7018A-003 JEITA, JEDEC : SC-74, SOT-26, SOT-457 Minimum Packing Quantity : 3,000 pcs./reel CPH6354-TL-H CPH6354-TL-W 2.9 0.15 Packing Type: TL Marking 645 0.05 TL 1 2 3 0.95 1 : Drain 0.4 2 : Drain Electrical Connection 3 : Gate 1, 2, 5, 6 4 : Source 5 : Drain 6 : Drain CPH6 3 ORDERING INFORMATION 4 See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 Publication Order Number : 1 November 2014 - Rev. 2 CPH6354/D 0.9 2.8 0.2 0.6 1.6 0.6 0.2 XE LOT No.CPH6354 Electrical Characteristics at Ta=25C Value Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--60V, V =0V --1 mA DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 mA GSS GS DS Gate Threshold Voltage V (th) V =--10V, I =--1mA --1.2 --2.6 V GS DS D g Forward Transconductance V =--10V, I =--2A 4.8 S FS DS D R (on)1 I =--2A, V =--10V 77 100 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1A, V =--4.5V 96 135 m DS D GS R (on)3 I =--1A, V =--4V 103 145 m DS D GS Input Capacitance Ciss 600 pF Output Capacitance Coss V =--20V, f=1MHz 60 pF DS Reverse Transfer Capacitance Crss 50 pF Turn-ON Delay Time t (on) 5.8 ns d Rise Time t 12 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 78 ns d Fall Time t 40 ns f Total Gate Charge Qg 14 nC Gate-to-Source Charge Qgs V =--30V, V =--10V, I =--4A 1.6 nC DS GS D Gate-to-Drain Miller Charge Qgd 3.4 nC Forward Diode Voltage V I =--4A, V =0V --0.84 --1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V = --30V IN DD 0V --10V I = --2A D V IN R =15 L D V OUT PW=10ms D.C.1% G CPH6354 P.G 50 S ORDERING INFORMATION Device Package Shipping memo CPH6354-TL-H CPH6 3,000pcs./reel Pb-Free and Halogen Free CPH6354-TL-W www.onsemi.com 2