DMG7N65SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D BVDSS RDS(ON) Max High BV Rating for Power Application DSS TC = +25C Low Input Capacitance 650V 1.4 VGS = 10V 5.5A Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and Description and Applications manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. This MOSFET is designed to minimize the on-state resistance DMG7N65SJ3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 650 V DSS Gate-Source Voltage V 30 V GSS TC = +25C 5.5 Continuous Drain Current (Note 5) V = 10V I A GS D 3.7 TC = +100C 0.7 A Continuous Drain Current (Note 5) VGS = 10V TA = +25C ID Maximum Body Diode Forward Current (Note 5) I 5.5 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 10 A DM Avalanche Current (Note 6) L = 60mH I 1.7 A AS Avalanche Energy (Note 6) L = 60mH E 87 mJ AS Peak Diode Recovery dv/dt (Note 6) dv/dt 3 V/ns Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit 125 TC = +25C Total Power Dissipation (Note 5) W PD 50 TC = +100C Total Power Dissipation (Note 5) 1.8 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) R 70 JA C/W Thermal Resistance, Junction to Case (Note 5) R 1 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 650 V BVDSS VGS = 0V, ID = 250A Zero Gate Voltage Drain Current I 1 A V = 650V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 24V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 3 4 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 1.1 1.4 V = 10V, I = 2.5A DS(ON) GS D Diode Forward Voltage V 0.84 1.5 V V = 0V, I = 5A SD GS S DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance C 886 iss VDS = 50V, f = 1MHz, Output Capacitance C 62 pF oss V = 0V GS Reverse Transfer Capacitance 8.8 Crss Gate Resistance 1.36 RG VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge 25 Qg V = 480V, I = 5A, DS D Gate-Source Charge 3.5 nC Qgs VGS = 10V Gate-Drain Charge 12.4 Q gd Turn-On Delay Time 10 t D(ON) Turn-On Rise Time 11 tR VDS = 300V, VGS = 10V, ns Turn-Off Delay Time 36 RG = 4.7, ID = 2.5A tD(OFF) Turn-Off Fall Time 15 t F Body Diode Reverse Recovery Time 245 ns tRR VDS=100V, IF = 5A, Body Diode Reverse Recovery Charge 1.89 C dI/dt = 100A/s Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Guaranteed by design. Not subject to production testing. 7. Short duration pulse test used to minimize self-heating effect. 2 of 7 DMG7N65SJ3 May 2020 Diodes Incorporated www.diodes.com Document number: DS38155 Rev. 3 - 2 NEW PRODUCT ADVANCED INFORMATION