X-On Electronics has gained recognition as a prominent supplier of DMG7N65SJ3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMG7N65SJ3 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMG7N65SJ3 Diodes Incorporated

DMG7N65SJ3 electronic component of Diodes Incorporated
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Part No.DMG7N65SJ3
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 501V-650V
Datasheet: DMG7N65SJ3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.6952
10 : USD 1.2509
75 : USD 0.9374
525 : USD 0.7749
1050 : USD 0.5876
2550 : USD 0.5489
10050 : USD 0.5016
25050 : USD 0.4968
50025 : USD 0.4859
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the DMG7N65SJ3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMG7N65SJ3 and other electronic components in the MOSFETs category and beyond.

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DMG7N65SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D BVDSS RDS(ON) Max High BV Rating for Power Application DSS TC = +25C Low Input Capacitance 650V 1.4 VGS = 10V 5.5A Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and Description and Applications manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. This MOSFET is designed to minimize the on-state resistance DMG7N65SJ3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 650 V DSS Gate-Source Voltage V 30 V GSS TC = +25C 5.5 Continuous Drain Current (Note 5) V = 10V I A GS D 3.7 TC = +100C 0.7 A Continuous Drain Current (Note 5) VGS = 10V TA = +25C ID Maximum Body Diode Forward Current (Note 5) I 5.5 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 10 A DM Avalanche Current (Note 6) L = 60mH I 1.7 A AS Avalanche Energy (Note 6) L = 60mH E 87 mJ AS Peak Diode Recovery dv/dt (Note 6) dv/dt 3 V/ns Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit 125 TC = +25C Total Power Dissipation (Note 5) W PD 50 TC = +100C Total Power Dissipation (Note 5) 1.8 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) R 70 JA C/W Thermal Resistance, Junction to Case (Note 5) R 1 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 650 V BVDSS VGS = 0V, ID = 250A Zero Gate Voltage Drain Current I 1 A V = 650V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 24V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 3 4 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 1.1 1.4 V = 10V, I = 2.5A DS(ON) GS D Diode Forward Voltage V 0.84 1.5 V V = 0V, I = 5A SD GS S DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance C 886 iss VDS = 50V, f = 1MHz, Output Capacitance C 62 pF oss V = 0V GS Reverse Transfer Capacitance 8.8 Crss Gate Resistance 1.36 RG VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge 25 Qg V = 480V, I = 5A, DS D Gate-Source Charge 3.5 nC Qgs VGS = 10V Gate-Drain Charge 12.4 Q gd Turn-On Delay Time 10 t D(ON) Turn-On Rise Time 11 tR VDS = 300V, VGS = 10V, ns Turn-Off Delay Time 36 RG = 4.7, ID = 2.5A tD(OFF) Turn-Off Fall Time 15 t F Body Diode Reverse Recovery Time 245 ns tRR VDS=100V, IF = 5A, Body Diode Reverse Recovery Charge 1.89 C dI/dt = 100A/s Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Guaranteed by design. Not subject to production testing. 7. Short duration pulse test used to minimize self-heating effect. 2 of 7 DMG7N65SJ3 May 2020 Diodes Incorporated www.diodes.com Document number: DS38155 Rev. 3 - 2 NEW PRODUCT ADVANCED INFORMATION

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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