NVD6415ANT4G ON Semiconductor

NTD6415AN, NVD6415AN MOSFET Power, N-Channel 100 V, 23 A, 55 m Features NTD6415AN, NVD6415AN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 113 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 7.6 mV/C GS(TH) J Coefficient DraintoSource OnResistance R V = 10 V, I = 23 A 47 55 m DS(on) GS D Forward Transconductance g V = 5 V, I = 10 A 13 S FS GS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 700 pF ISS Output Capacitance C V = 0 V, f = 1.0 MHz, V = 25 V 110 OSS GS DS Reverse Transfer Capacitance C 52 RSS Total Gate Charge Q 29 nC G(TOT) Threshold Gate Charge Q 1.2 G(TH) GatetoSource Charge Q V = 10 V, V = 80 V, I = 23 A 5 GS DS D GS GatetoDrain Charge Q 14.6 GD Plateau Voltage V 5.7 V GP Gate Resistance R 2.3 G SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 10 ns d(on) Rise Time t 37 r V = 10 V, V = 80 V, GS DD I = 23 A, R = 6.1 D G TurnOff Delay Time t 30 d(off) Fall Time t 37 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.83 1.2 V SD J V = 0 V, I = 23 A GS S T = 125C 0.68 J ns Reverse Recovery Time t 65 RR Charge Time T 46 a V = 0 V, dI /dt = 100 A/ s, GS S I = 23 A S Discharge Time T 19 b Reverse Recovery Charge Q 176 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.