NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single NChannel, DPAK/IPAK Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V R MAX I MAX (BR)DSS DS(on) D Unique Site and Control Change Requirements AECQ101 10 m 10 V Qualified and PPAP Capable 30 V 54 A These Devices are PbFree and are RoHS Compliant 15.7 m 4.5 V Applications D CPU Power Delivery DCDC Converters NChannel G MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit S DraintoSource Voltage V 30 V DSS 4 GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 12.4 A A D 2 1 Current (R ) (Note 1) JA 3 T = 85C 9.6 A CASE 369AA Power Dissipation T = 25C P 2.62 W A D DPAK (R ) (Note 1) JA (Bent Lead) STYLE 2 Continuous Drain T = 25C I 9 A A D Current (R ) (Note 2) JA T = 85C 7 A Steady MARKING DIAGRAM State Power Dissipation T = 25C P 1.4 W A D & PIN ASSIGNMENT (R ) (Note 2) JA 4 Drain Continuous Drain T = 25C I 54 A C D Current (R ) JC T = 85C 42 (Note 1) C Power Dissipation T = 25C P 50 W C D (R ) (Note 1) JC Pulsed Drain Current t =10 s T = 25C I 120 A 2 A DM p Drain 1 3 Current Limited by Package T = 25C I 45 A A DmaxPkg Gate Source A = Assembly Location* Operating Junction and Storage Temperature T , T 55 to C J stg 175 Y = Year WW = Work Week Source Current (Body Diode) I 41 A S 4810N = Device Code G = PbFree Package Drain to Source dV/dt dV/dt 6.0 V/ns * The Assembly Location code (A) is front side Single Pulse DraintoSource Avalanche E 98 mJ AS Energy (V = 24 V, V = 10 V, optional. In cases where the Assembly Location is DD GS L = 1.0 mH, I = 14 A, R = 25 ) stamped in the package, the front side assembly L(pk) G code may be blank. Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information in the package assumed, damage may occur and reliability may be affected. dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: April, 2017 Rev. 11 NTD4810N/D AYWW 48 10NGNTD4810N, NVD4810N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 3.0 C/W JC JunctiontoTAB (Drain) R 3.5 JCTAB JunctiontoAmbient Steady State (Note 1) R 57.2 JA JunctiontoAmbient Steady State (Note 2) R 107.3 JA 1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 30 V V = 0 V, I = 250 A (BR)DSS GS D DraintoSource Breakdown Voltage V /T 27 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I A T = 25C 1.0 DSS J V = 0 V, GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V 1.5 2.5 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.2 mV/C GS(TH) J DraintoSource On Resistance R V = 10 to m I = 30 A 8.0 10 DS(on) GS D 11.5 V I = 15 A 7.8 D V = 4.5 V I = 30 A 12 15.7 GS D I = 15 A 11 D Forward Transconductance g V = 15 V, I = 10 A 9.0 S FS DS D CHARGES AND CAPACITANCES pF Input Capacitance C 1165 1350 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 284 330 oss V = 12 V DS Reverse Transfer Capacitance C 154 200 rss nC Total Gate Charge Q 9.2 11 G(TOT) Threshold Gate Charge Q 1.3 G(TH) V = 4.5 V, V = 15 V, GS DS I = 30 A D GatetoSource Charge Q 3.3 GS GatetoDrain Charge Q 4.4 GD Total Gate Charge Q V = 11.5 V, V = 15 V, 21 nC G(TOT) GS DS I = 30 A D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 11.5 ns d(on) Rise Time t 20.7 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G TurnOff Delay Time t 13.8 d(off) Fall Time t 3.8 f ns TurnOn Delay Time t 7.2 d(on) Rise Time t 20.7 r V = 11.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 TurnOff Delay Time t D G 21.8 d(off) Fall Time t 2.6 f 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2