DMP2021UTS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage I max D BV R max DSS DS(ON) Low On-Resistance T = +25C C -18A 16m V = -4.5V ESD Protected Gate GS -20V 22m V = -2.5V -15A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications An Automotive-Compliant Part is Available Under Separate This MOSFET is designed to minimize the on-state resistance Datasheet (DMP2021UTSQ) (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Mechanical Data Case: TSSOP-8 Battery Management Application Case Material: Molded Plastic, Green Molding Compound. UL Power Management Functions Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Lead Frame. Solderable per MIL-STD-202, Method 208 Weight: 0.039 grams (Approximate) TSSOP-8 D S D G S D D S ESD PROTECTED G D Gate Protection S Diode Pin1 Top View Bottom View Pin Out Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP2021UTS-13 TSSOP-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2021UTS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 10 V GSS Steady T = +25C -7.4 A I A D State -5.9 T = +70C A Continuous Drain Current (Note 6) V = -4.5V GS Steady T = +25C -18 C A I D State -14 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A DM Continuous Source-Drain Diode Current (Note 6) T = +25C A A I S Pulsed Source-Drain Diode Current (10s Pulse, Duty Cycle = 1%) I A SM Avalanche Current (Note 7) L = 0.1mH I A AS Avalanche Energy (Note 7) L = 0.1mH mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 0.9 W A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 146 C/W R JA Total Power Dissipation (Note 6) T = +25C P 1.3 W A D Thermal Resistance, Junction to Ambient (Note 6) Steady State 95 R JA C/W Thermal Resistance, Junction to Case (Note 6) Steady State R 16 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1 A V = -20V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -0.35 -1.0 V V = V , I = -250A GS(TH) DS GS D 12 16 V = -4.5V, I = -4.5A GS D Static Drain-Source On-Resistance 15 22 m RDS(ON) VGS = -2.5V, ID = -4.5A 19 40 V = -1.8V, I = -2.5A GS D Diode Forward Voltage -0.8 -1.2 V V V = 0V, I = -1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 2,760 C iss V = -15V, V = 0V, DS GS Output Capacitance 262 pF C oss f = 1.0MHz Reverse Transfer Capacitance 220 C rss 16 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 34 Total Gate Charge (V = -4.5V) Q GS g 59 Total Gate Charge (V = -8V) Q GS g nC V = -15V, I = -4.0A DS D 3.5 Gate-Source Charge Q gs 8.3 Gate-Drain Charge Qgd 7.5 Turn-On Delay Time t D(ON) Turn-On Rise Time 25 t V = -15V, V = -4.5V, R DS GS ns Turn-Off Delay Time 125 R = 1, I = -4.0A t G D D(OFF) Turn-Off Fall Time 96 t F Reverse Recovery Time 48 ns t I = -1.0A, di/dt = 100A/s RR F Reverse Recovery Charge Q 33 nC I = -1.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMP2021UTS July 2017 Diodes Incorporated www.diodes.com Document number: DS39575 Rev. 2 - 2