DMN25D0UFA
25V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
0.4mm ultra low profile package for thin application
I
D
V R
(BR)DSS DS(on) 2
T = +25 C 0.48mm package footprint, 16 times smaller than SOT23
A
Low V can be driven directly from a battery
4 @ V = 4.5V 0.32A GS(th),
GS
25V
Low R
DS(on)
5 @ V = 2.7V 0.28A
GS
ESD Protected Gate (>6kV Human Body Mode)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Description
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET has been designed to minimize the on-state resistance
(R ) and yet maintain superior switching performance, making it
DS(ON)
ideal for high efficiency power management applications.
Mechanical Data
Case: X2-DFN0806-3
Applications
Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Load switch
Moisture Sensitivity: Level 1 per J-STD-020
Portable applications
Terminals: Finish NiPdAu over Copper leadframe. Solderable
Power Management Functions
per MIL-STD-202, Method 208 e4
Weight: 0.00043 grams (approximate)
Drain
X2-DFN0806-3
Body
Diode
Gate
Gate
ESD HBM >6kV
Protection
Source
Diode
Top View
Bottom View Equivalent Circuit
Package Pin Configuration
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMN25D0UFA-7B Standard X2-DFN0806-3 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN25D0UFA
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 25
V
DSS
V
Gate-Source Voltage 8
V
GSS
(Note 6) 0.32
A
I
D
0.25
Continuous Drain Current, V = 4.5V T = +70C (Note 6)
GS A
(Note 5) I 0.24 A
D
Pulsed Drain Current (Note 7) I 1.2 A
DM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
(Note 6) 0.63
Power Dissipation W
P
D
(Note 5) 0.28
(Note 6) 201
Thermal Resistance, Junction to Ambient C/W
R
JA
(Note 5) 338
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 25 V V = 0V, I = 250 A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 20V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 8V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 0.6 1.2 V V = V , I = 250 A
GS(th) DS GS D
4
V = 4.5V, I = 0.4A
GS D
Static Drain-Source On-Resistance R
DS(on)
5
V = 2.7V, I = 0.2A
GS D
Forward Transfer Admittance 1 - S
|Y | V = 5V, I = 0.4A
fs DS D
Diode Forward Voltage 0.76 1.2 V
V V = 0V, I = 0.29A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 27.9
C pF
iss
V = 10V, V = 0V,
DS GS
6.1
Output Capacitance C pF
oss
f = 1MHz
2
Reverse Transfer Capacitance C pF
rss
26.4
Gate Resistance R V = 0V, V = 0V, f = 1MHz
g DS GS
0.36
Total Gate Charge Q nC
g
V = 5V, V = 4.5V,
DS GS
0.06
Gate-Source Charge Q nC
gs
I = 0.2A
D
0.04
Gate-Drain Charge Q nC
gd
Turn-On Delay Time 2.9 ns
t
D(on)
Turn-On Rise Time 1.8 ns
t
r V = 6V, V = 4.5V,
DS GS
Turn-Off Delay Time 6.6 ns I = 0.5A, R = 50
t D G
D(off)
Turn-Off Fall Time 2.3 ns
t
f
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 6 February 2014
DMN25D0UFA
Diodes Incorporated
www.diodes.com
Document number: DS36253 Rev. 1 - 2