X-On Electronics has gained recognition as a prominent supplier of NVMFD5853NLWFT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVMFD5853NLWFT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVMFD5853NLWFT1G ON Semiconductor

NVMFD5853NLWFT1G electronic component of ON Semiconductor
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Part No.NVMFD5853NLWFT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 40V 12A Automotive 8-Pin DFN EP T/R
Datasheet: NVMFD5853NLWFT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 1.3683 ea
Line Total: USD 2052.45 
Availability - 0
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 1.3683

   
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We are delighted to provide the NVMFD5853NLWFT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMFD5853NLWFT1G and other electronic components in the MOSFETs category and beyond.

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NVMFD5853NL Power MOSFET 40 V, 10 m , 34 A, Dual NChannel Logic Level, Dual SO8FL Features Small Footprint (5x6 mm) for Compact Designs NVMFD5853NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 37.1 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A J DSS V = 0 V, GS V = 40 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.4 2.4 V GS(TH) GS DS D Negative Threshold Temperature V /T 5.9 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 15 A 8.4 10 m DS(on) GS D V = 4.5 V, I = 15 A 12.7 15 GS D Forward Transconductance g V = 5 V, I = 5 A 22 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1100 pF iss Output Capacitance C 152 V = 0 V, f = 1.0 MHz, V = 25 V oss GS DS Reverse Transfer Capacitance C 100 rss Total Gate Charge Q 12.8 nC G(TOT) Threshold Gate Charge Q 1.0 G(TH) V = 4.5 V, V = 32 V, GS DS I = 15 A D GatetoSource Charge Q 3.7 GS GatetoDrain Charge Q 7.0 GD Total Gate Charge Q V = 10 V, V = 32 V, I = 15 A 23 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 10 ns d(on) Rise Time t 53 r V = 4.5 V, V = 20 V, GS DS I = 15 A, R = 2.5 D G TurnOff Delay Time t 17 d(off) Fall Time t 30 f TurnOn Delay Time t 9.0 ns d(on) Rise Time t 23 r V = 10 V, V = 20 V, GS DS I = 15 A, R = 2.5 D G TurnOff Delay Time t 22 d(off) Fall Time t 4.3 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.84 1.1 V J SD V = 0 V, GS I = 20 A S T = 125C 0.69 J Reverse Recovery Time t 20 ns RR Charge Time t 12 a V = 0 V, d /d = 100 A/ s, GS IS t I = 15 A S Discharge Time t 8.1 b Reverse Recovery Charge Q 12.1 nC RR 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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