NVMFS4C05N MOSFET Power, Single N-Channel, SO-8 FL 30 V, 127 A Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V R MAX I MAX (BR)DSS DS(ON) D NVMFS4C05NWF Wettable Flanks Option for Enhanced Optical 2.8 m 10 V Inspection 30 V 127 A 4.0 m 4.5 V AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS D (58) Compliant MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit G (4) DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V GS S (1,2,3) Continuous Drain T = 25C 27.2 A A NCHANNEL MOSFET Current R I JA D T = 80C 21.6 (Notes 1, 2 and 4) A MARKING Power Dissipation T = 25C 3.61 W A DIAGRAM R (Notes 1, 2 P JA D and 4) D Continuous Drain T = 25C 127 C S D 1 Current R JC Steady 4C05xx S (Notes 1, 2, 3 SO8 FLAT LEAD State AYWZZ S and 4) CASE 488AA I A G D D Continuous Drain T = 80C 101 STYLE 1 C D Current R JC 4C05N = Specific Device Code for (Notes 1, 2, 3 NVMFS4C05N and 4) 4C05WF= Specific Device Code of Power Dissipation T = 25C P 79 W NVMFS4C05NWF C D R (Notes 1, 2, 3 A = Assembly Location JC and 4) Y = Year W = Work Week Pulsed Drain T = 25C, t = 10 s I 174 A A p DM ZZ = Lot Traceabililty Current Operating Junction and Storage T , 55 to C J ORDERING INFORMATION Temperature T +175 STG Device Package Shipping Source Current (Body Diode) I 72 A S NVMFS4C05NT1G SO8 FL 1500 / Single Pulse DraintoSource Avalanche E 42 mJ AS (PbFree) Tape & Reel Energy (T = 25C, I = 29 A , L = 0.1 mH) J L pk Lead Temperature for Soldering Purposes T 260 C NVMFS4C05NT3G SO8 FL 5000 / L (1/8 from case for 10 s) (PbFree) Tape & Reel NVMFS4C05NWFT1G SO8 FL 1500 / Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be (PbFree) Tape & Reel assumed, damage may occur and reliability may be affected. NVMFS4C05NWFT3G SO8 FL 5000 / 1. The entire application environment impacts the thermal resistance values shown, (PbFree) Tape & Reel they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using 650 mm , 2 oz Cu pad. 3. Assumes heatsink sufficiently large to maintain constant case temperature For information on tape and reel specifications, independent of device power. including part orientation and tape sizes, please 4. Continuous DC current rating. Maximum current for pulses as long as one refer to our Tape and Reel Packaging Specifications second is higher but dependent on pulse duration and duty cycle. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2019 Rev. 2 NVMFS4C05N/DNVMFS4C05N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 1.9 JC C/W JunctiontoAmbient Steady State (Note 5) R 41.6 JA 2 5. Surfacemounted on FR4 board using 650 mm , 2 oz Cu pad. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 12 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J A V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.1 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 2.3 2.8 DS(on) GS D m V = 4.5 V I = 30 A 3.3 4.0 GS D Forward Transconductance g V = 1.5 V, I = 15 A 68 S FS DS D Gate Resistance R T = 25C 0.3 1.0 2.0 G A CHARGES AND CAPACITANCES Input Capacitance C 1972 ISS Output Capacitance C 1215 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 59 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.030 RSS ISS GS DS Total Gate Charge Q 14 G(TOT) Threshold Gate Charge Q 3.3 G(TH) nC GatetoSource Charge Q 6.0 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 5.0 GD Gate Plateau Voltage V 3.1 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 30 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) TurnOn Delay Time t 11 d(ON) Rise Time t 32 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 TurnOff Delay Time t D G 21 d(OFF) Fall Time t 7.0 f TurnOn Delay Time t 8.0 d(ON) Rise Time t 26 r V = 10 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 TurnOff Delay Time t D G 26 d(OFF) Fall Time t 5.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.77 1.1 SD V = 0 V, J GS V I = 10 A S T = 125C 0.62 J Reverse Recovery Time t 40.2 RR Charge Time t 20.3 ns a V = 0 V, dI /dt = 100 A/ s, GS S I = 30 A Discharge Time t S 19.9 b nC Reverse Recovery Charge Q 30.2 RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2