NVMFS4C310N Power MOSFET 30 V, 51 A, Single NChannel, SO8 FL Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com NVMFS4C310NWF Wettable Flanks Option for Enhanced Optical Inspection V R MAX I MAX (BR)DSS DS(ON) D AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant 6.0 m 10 V 30 V 51 A MAXIMUM RATINGS (T = 25C unless otherwise stated) 9.0 m 4.5 V J Parameter Symbol Value Unit D (58) DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C 17 A A Current R I JA D G (4) T = 100C 12 (Notes 1, 2 and 4) A Power Dissipation T = 25C 3.5 W A R (Notes 1, 2 P S (1,2,3) JA D and 4) NCHANNEL MOSFET Steady Continuous Drain T = 25C 51 State C Current R JC MARKING I A D (Notes 1, 2, 3 T = 100C 36 C DIAGRAM and 4) D Power Dissipation T = 25C P 32 W C D R (Notes 1, 2, 3 S D JC 1 and 4) XXXXXX S SO8 FLAT LEAD AYWZZ S Pulsed Drain T = 25C, t = 10 s I 132 A A p DM CASE 488AA G D Current STYLE 1 D Operating Junction and Storage T , 55 to C J Temperature T +175 4C10N = Specific Device Code for STG NVMFS4C310N Source Current (Body Diode) I 21 A S 4C10WF= Specific Device Code of Single Pulse DraintoSource Avalanche E 31 mJ NVMFS4C310NWF AS Energy (I = 25 A ) (Note 3) A = Assembly Location L pk Y = Year Lead Temperature for Soldering Purposes T 260 C L W = Work Week (1/8 from case for 10 s) ZZ = Lot Traceabililty Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Device Package Shipping 2 2. Surfacemounted on FR4 board using 650 mm , 2 oz Cu pad. 3. Assumes heatsink sufficiently large to maintain constant case temperature NVMFS4C310NT1G SO8 FL 1500 / independent of device power. (PbFree) Tape & Reel 4. Continuous DC current rating. Maximum current for pulses as long as one second is higher but dependent on pulse duration and duty cycle. NVMFS4C310NWFT1G SO8 FL 1500 / THERMAL RESISTANCE MAXIMUM RATINGS (PbFree) Tape & Reel Parameter Symbol Value Unit For information on tape and reel specifications, including part orientation and tape sizes, please JunctiontoCase (Drain) 4.7 R JC refer to our Tape and Reel Packaging Specifications C/W Brochure, BRD8011/D. JunctiontoAmbient R 43 JA Steady State (Note 5) 2 5. Surfacemounted on FR4 board using 650 mm , 2 oz Cu pad. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: August, 2017 Rev. 0 NVMFS4C310N/DNVMFS4C310N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 14.5 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 5.0 6.0 DS(on) GS D m V = 4.5 V I = 30 A 7.5 9.0 GS D Forward Transconductance g V = 1.5 V, I = 15 A 43 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1000 ISS Output Capacitance C 580 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 160 RSS Total Gate Charge Q 9.7 G(TOT) Threshold Gate Charge Q 1.5 G(TH) nC GatetoSource Charge Q 2.8 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 4.8 GD Gate Plateau Voltage V 3.2 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 18.6 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) TurnOn Delay Time t 9.0 d(ON) Rise Time t 34 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 14 d(OFF) Fall Time t 7.0 f TurnOn Delay Time t 7.0 d(ON) Rise Time t 26 r V = 10 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 18 d(OFF) Fall Time t 4.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.80 1.1 SD J V = 0 V, GS V I = 10 A S T = 125C 0.67 J Reverse Recovery Time t 26.7 RR Charge Time t 14.1 ns a V = 0 V, dI /dt = 100 A/ s, GS S I = 30 A S Discharge Time t 12.6 b Reverse Recovery Charge Q 13.7 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2