NVMFD5489NL Power MOSFET 60 V, 65 m , 12 A, Dual NCh Logic Level Features Small Footprint (5x6 mm) for Compact Designs Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses 175C Operating Temperature V R MAX I MAX (BR)DSS DS(on) D NVMFD5489NLWF Wettable Flank Option for Enhanced Optical 65 m 10 V Inspection 60 V 12 A AECQ101 Qualified and PPAP Capable 79 m 4.5 V This is a PbFree Device MAXIMUM RATINGS (T = 25C unless otherwise noted) J Dual NChannel Parameter Symbol Value Unit D1 D2 DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS Continuous Drain Cur- T = 25C I 12 A mb D rent R G1 G2 Jmb T = 100C 8.8 (Notes 1, 2, 3, 4) Steady mb State Power Dissipation T = 25C P 23.4 W mb D S1 S2 R (Notes 1, 2, 3) Jmb T = 100C 11.7 mb Continuous Drain Cur- T = 25C I 4.5 A A D MARKING DIAGRAM rent R JA T = 100C 3.2 (Notes 1, 3 & 4) Steady A 1 D1 D1 State S1 D1 Power Dissipation T = 25C P 3.0 W A D DFN8 5x6 R (Notes 1 & 3) G1 D1 XXXXXX JA (SO8FL) T = 100C 1.5 A S2 D2 AYWZZ CASE 506BT Pulsed Drain Current T = 25C, t = 10 s I 62 A A p DM G2 D2 Operating Junction and Storage Temperature T , T 55 to C D2 D2 J stg 175 XXXXXX = 5489NL Source Current (Body Diode) I 22 A XXXXXX = (NVMFD5489NL) or S XXXXXX = 5489LW Single Pulse DraintoSource Avalanche E 19 mJ AS XXXXXX = (NVMFD5489NLWF) Energy (T = 25C, I = 19.5 A, L = 0.1 mH, J L(pk) R = 25 ) A = Assembly Location G Y = Year Lead Temperature for Soldering Purposes T 260 C L W = Work Week (1/8 from case for 10 s) ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit NVMFD5489NLT1G DFN8 1500/ (PbFree) Tape & Reel JunctiontoMounting Board (top) Steady R 6.4 Jmb State (Notes 2, 3) NVMFD5489NLT3G DFN8 5000/ (PbFree) Tape & Reel JunctiontoAmbient Steady State (Note 3) 50 C/W R JunctiontoAmbient Steady State JA 161 NVMFD5489NLWFT1G DFN8 1500/ (min footprint) (PbFree) Tape & Reel 1. The entire application environment impacts the thermal resistance values shown, NVMFD5489NLWFT3G DFN8 5000/ they are not constants and are only valid for the particular conditions noted. (PbFree) Tape & Reel 2. Psi ( ) is used as required per JESD5112 for packages in which substantially less than 100% of the heat flows to single case surface. For information on tape and reel specifications, 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. including part orientation and tape sizes, please 4. Continuous DC current rating. Maximum current for pulses as long as 1 refer to our Tape and Reel Packaging Specification second are higher but are dependent on pulse duration and duty cycle. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2015 Rev. 3 NVMFD5489NL/DNVMFD5489NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T Reference to 25C 67 mV/C (BR)DSS J Temperature Coefficient I = 250 A D Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature Co- V /T Reference to 25C 4.86 mV/C GS(TH) J efficient I = 250 A D DraintoSource On Resistance R V = 10 V, I = 15 A 52 65 m DS(on) GS D V = 4.5 V, I = 7.5 A 66 79 GS D CHARGES AND CAPACITANCES Input Capacitance C 330 pF iss Output Capacitance C V = 0 V, f = 1.0 MHz, V = 25 V 80 oss GS DS Reverse Transfer Capacitance C 39 rss Total Gate Charge Q 12.4 nC G(TOT) Threshold Gate Charge Q 0.31 G(TH) V = 10 V, V = 48 V, GS DS I = 6 A D GatetoSource Charge Q 1.3 GS GatetoDrain Charge Q 4.74 GD SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 7 ns d(on) Rise Time t 11 r V = 10 V, V = 48 V, GS DS I = 6 A, R = 2.5 D G TurnOff Delay Time t 31 d(off) Fall Time t 21 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.83 1.2 V SD V = 0 V, J GS I = 10 A S T = 125C 0.71 J Reverse Recovery Time t 24.2 ns RR Charge Time t 20.2 a V = 0 V, d /d = 100 A/ s, GS IS t I = 10 A S Discharge Time t 4.0 b Reverse Recovery Charge Q 26.5 nC RR PACKAGE PARASITIC VALUES Source Inductance L 0.93 nH S Drain Inductance L 0.005 D T = 25C A Gate Inductance L 1.84 G Gate Resistance R 12 G 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2