X-On Electronics has gained recognition as a prominent supplier of NTMFS4H02NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMFS4H02NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMFS4H02NT1G ON Semiconductor

NTMFS4H02NT1G electronic component of ON Semiconductor
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Part No.NTMFS4H02NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET SO8FL 25V 193A 1.4MO
Datasheet: NTMFS4H02NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 1.9631 ea
Line Total: USD 2944.65 
Availability - 0
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 1.9631
4500 : USD 1.8392

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.8098
10 : USD 3.8007
25 : USD 3.5936
100 : USD 3.1172
500 : USD 2.6512
1000 : USD 2.3198
1500 : USD 2.2369

   
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We are delighted to provide the NTMFS4H02NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMFS4H02NT1G and other electronic components in the MOSFETs category and beyond.

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NTMFS4H02N Power MOSFET 25 V, 193 A, Single NChannel, SO8FL Features Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances NTMFS4H02N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 25 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 18.5 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1 DSS GS J A V = 20 V DS T = 125C 20 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.2 2.1 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 3.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 1.1 1.4 DS(on) GS D m V = 4.5 V I = 30 A 1.7 2.2 GS D Forward Transconductance g V = 12 V, I = 15 A 84 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 2651 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 12 V 1814 pF OSS GS DS Reverse Transfer Capacitance C 103 RSS Total Gate Charge Q 18 G(TOT) Threshold Gate Charge Q 2.7 G(TH) V = 4.5 V, V = 12 V I = 30 A nC GS DS D GatetoSource Charge Q 7.2 GS GatetoDrain Charge Q 4.2 GD Total Gate Charge Q V = 10 V, V = 12 V I = 30 A 38.5 nC G(TOT) GS DS D Gate Resistance R T = 25C 1.0 2 G A SWITCHING CHARACTERISTICS, V = 4.5 V (Note 5) GS TurnOn Delay Time t 13.1 d(ON) Rise Time t 20 r V = 4.5 V, V = 12 V, I = 15 A, GS DD D ns R = 3.0 G TurnOff Delay Time t 22.2 d(OFF) Fall Time t 9.1 f SWITCHING CHARACTERISTICS, V = 10 V (Note 5) GS TurnOn Delay Time t 9.5 d(ON) Rise Time t 18.5 r V = 10 V, V = 12 V, GS DD ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 30.3 d(OFF) Fall Time t 5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.75 1.1 SD J V = 0 V, GS V I = 10 A S T = 125C 0.56 J Reverse Recovery Time t 46.3 RR Charge Time t 23.9 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 30 A S Discharge Time t 22.4 b Reverse Recovery Charge Q 51 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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