Green DMT6010LPS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary Features
Thermally Efficient Package-Cooler Running Applications
I
D
High Conversion Efficiency
BV R
DSS DS(ON) T = +25C
C
Low R Minimizes On State Losses
DS(ON)
(Note 9)
Low Input Capacitance
80A
8m @ V = 10V
GS
60V
Fast Switching Speed
79A
12m @ V = 4.5V
GS
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description and Applications
Qualified to AEC-Q101 Standards for High Reliability
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize R and yet maintain superior switching
DS(ON)
Mechanical Data
performance. This device is ideal for use in Notebook battery power
management and Loadswitch. Case: PowerDI 5060-8
Case Material: Molded Plastic, Green Molding Compound. UL
Notebook Battery Power Management
Flammability Classification Rating 94V-0
DC-DC Converters
Moisture Sensitivity: Level 1 per J-STD-020
Loadswitch
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
S D
Pin1
S D
D
S
D
G
Top View Top View
Bottom View Internal Schematic
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMT6010LPS-13 PowerDI5060-8 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMT6010LPS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C 13.5
A
Continuous Drain Current (Note 5) I A
D
11
T = +70C
A
T = +25C
C
80
Continuous Drain Current (Note 6) (Note 9) A
I
D
T = +70C
C 77
Maximum Continuous Body Diode Forward Current (Note 6) 80 A
I
S
125 A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I
DM
Avalanche Current, L=0.1mH 20 A
I
AS
Avalanche Energy, L=0.1mH E 20 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 2.2 W
TA = +25C PD
Thermal Resistance, Junction to Ambient (Note 5) 57 C/W
R
JA
Total Power Dissipation (Note 6) 113 W
T = +25C P
C D
Thermal Resistance, Junction to Case (Note 6) 1.1 C/W
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 60 - - V V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current I - - 1 A V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage - - 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 1 - 3 V
V V = V , I = 250A
GS(TH) DS GS D
- 6 8
V = 10V, I = 20A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
- 8 12
V = 4.5V, I = 20A
GS D
Diode Forward Voltage - 0.9 1.2 V
V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
2090
Input Capacitance C - -
iss
V = 30V, V = 0V,
DS GS
746
Output Capacitance C - - pF
oss
f = 1MHz
38.5
Reverse Transfer Capacitance C - -
rss
0.59
Gate Resistance R - - V = 0V, V = 0V, f = 1MHz
g DS GS
19.3
Total Gate Charge (V = 4.5V) Q - -
GS g
41.3
Total Gate Charge (V = 10V) Q - -
GS g
nC V = 30V, I = 20A
DS D
Gate-Source Charge - 6.0 -
Q
gs
Gate-Drain Charge - 8.8 -
Q
gd
Turn-On Delay Time - 5.7 -
t
D(ON)
Turn-On Rise Time - 4.3 -
t V = 30V, V = 10V,
R DD GS
ns
23.4
Turn-Off Delay Time t - - I = 20A, R = 3
D(OFF) D G
9.7
Turn-Off Fall Time t - -
F
Body Diode Reverse Recovery Time t - 35.4 - ns
RR
I = 20A, di/dt = 100A/s
F
Body Diode Reverse Recovery Charge Q - 38.2 - nC
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
2 of 7
DMT6010LPS November 2016
Diodes Incorporated
www.diodes.com
Document number: DS37590 Rev.2 - 2