DMN53D0LQ
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary Features and Benefits
Low On-Resistance
I
D
V R
(BR)DSS DS(ON)
T = +25C Very Low Gate Threshold Voltage
A
Low Input Capacitance
1.6 @ V = 10V 500 mA
GS
50V
Fast Switching Speed
2.5 @ V = 4.5V 200 mA
GS
Low Input/Output Leakage
ESD Protected to 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
Case: SOT23
(R ) and yet maintain superior switching performance, making it
DS(ON) Case Material: Molded Plastic, Green Molding Compound.
ideal for high-efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
SOT23
D
G S
ESD protected
Top View Top View Equivalent Circuit
Ordering Information (Note 5)
Part Number Case Packaging
DMN53D0LQ-7 SOT23 3,000/Tape & Reel
DMN53D0LQ-13 SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN53D0LQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain Source Voltage V 50 V
DSS
Gate-Source Voltage V 20 V
GSS
Drain Current (Note 7) I 500 mA
D
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) P 370 mW
D
Thermal Resistance, Junction to Ambient (Note 6) 344 C/W
R
JA
Total Power Dissipation (Note 7) P 540 mW
D
Thermal Resistance, Junction to Ambient (Note 7) 236
R C/W
JA
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 50 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1.0 A
I V = 50V, V = 0V
DSS DS GS
Gate-Body Leakage 10 A
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V 0.8 1.5 V V = V , I = 250A
GS(th) DS GS D
V = 10V, I = 500mA
1.6 GS D
Static Drain-Source On-Resistance R 2.5 V = 4.5V, I = 200mA
DS(ON) GS D
4.5
V = 2.5V, I = 100mA
GS D
Source-Drain Diode Forward Voltage 1.4 V
V V = 0V, I = 500mA
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C 46 pF
iss
V = 25V, V = 0V
DS GS
Output Capacitance C 5.3 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C 4.0 pF
rss
Total Gate Charge Q 0.6 nC
g
V = 4.5V, V = 10V,
GS DS
Gate-Source Charge Q 0.2 nC
gs
I = 250mA
D
Gate-Drain Charge Q 0.1 nC
gd
Turn-On Delay Time 2.7 ns
tD(on)
Turn-On Rise Time 2.5 ns
t V = 30V, V = 10V,
r DD GS
Turn-Off Delay Time 19 ns R = 25, I = 200mA
t G D
D(off)
Turn-Off Fall Time 11 ns
t
f
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMN53D0LQ January 2016
Diodes Incorporated
www.diodes.com
Document number: DS38552 Rev. 1 - 2