AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET V 150V DSS Features Advanced Process Technology R typ. 10.3m DS(on) Ultra Low On-Resistance max. 12.1m 175C Operating Temperature I 99A Fast Switching D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * D Description S S D Specifically designed for Automotive applications, this HEXFET G G Power MOSFET utilizes the latest processing techniques to achieve 2 TO-262 D Pak extremely low on-resistance per silicon area. Additional features of AUIRFSL4115 AUIRFS4115 this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These G D S features combine to make this design an extremely efficient and Gate Drain Source reliable device for use in Automotive applications and a wide variety of other applications Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFSL4115 TO-262 Tube 50 AUIRFSL4115 Tube 50 AUIRFS4115 2 AUIRFS4115 D -Pak Tape and Reel Left 800 AUIRFS4115TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 99 D C GS I T = 100C Continuous Drain Current, V 10V 70 A D C GS I Pulsed Drain Current 396 DM P T = 25C Maximum Power Dissipation 375 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery 18 V/ns E Single Pulse Avalanche Energy (Thermally Limited) 230 AS mJ T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.40 R JC C/W 2 R Junction-to-Ambient (PCB Mount), D Pak 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-27 AUIRFS/SL4115 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.18 V/C Reference to 25C, I = 3.5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 10.3 12.1 m V = 10V, I = 62A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 97 S V = 50V, I = 62A DS D 20 V = 150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 150V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.3 G Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 77 120 I = 62A g D Q Gate-to-Source Charge 28 V = 75V gs DS nC Q Gate-to-Drain Charge 26 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 51 sync g gd t Turn-On Delay Time 18 V = 98V d(on) DD t Rise Time 73 I = 62A r D ns t Turn-Off Delay Time 41 R = 2.2 d(off) G t Fall Time 39 V = 10V f GS C Input Capacitance 5270 V = 0V iss GS C Output Capacitance 490 V = 50V oss DS C Reverse Transfer Capacitance 105 = 1.0MHz, See Fig. 5 rss pF C Effective Output Capacitance (Energy Related) 460 V = 0V, V = 0V to 120V oss eff.(ER) GS DS C Effective Output Capacitance (Time Related) 530 V = 0V, V = 0V to 120V oss eff.(TR) GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 99 S (Body Diode) showing the A Pulsed Source Current integral reverse I 396 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 62A,V = 0V SD J S GS 86 T = 25C V = 130V J DD t Reverse Recovery Time ns rr 110 T = 125C I = 62A, J F 300 T = 25C di/dt = 100A/s J Q Reverse Recovery Charge nC rr 450 T = 125C J T = 25C I Reverse Recovery Current 6.5 A RRM J Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time S D on Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L = 0.115mH, R = 25 , I = 63A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS I 62A, di/dt 1040A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J R value shown is at time zero. JC 2 2015-10-27