IPB060N15N5ATMA1 Infineon

IPB060N15N5 MOSFET D-PAK 7pin OptiMOS 5 Power-Transistor , 150 V Features Features tab Excellent gate charge x RDS(on) product (FOM) Very low on-resistance R DS(on) Very low reverse recovery charge (Q ) rr 1 175 C operating temperature Pb-free lead plating RoHS compliant 7 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Drain Pin 4, tab Table 1 Key Performance Parameters Parameter Value Unit Gate Pin 1 V 150 V DS Source R 6.0 m DS(on),max (TO263) Pin 2,3,5,6,7 I 136 A D Q rr 60 nC Type / Ordering Code Package Marking Related Links IPB060N15N5 PG-TO263-7 060N15N5 - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.0, 2016-12-13 OptiMOS 5 Power-Transistor, 150 V IPB060N15N5 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.0, 2016-12-13