TSM4946D 60V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 V (V) R (m) I (A) DS DS(on) D 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 55 V = 10V 4.5 GS 60 4. Gate 2 5. Drain 2 75 V = 4.5V 3.9 GS Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application High-Side DC/DC Conversion Notebook Sever Ordering Information Part No. Package Packing Dual N-Channel MOSFET TSM4946DCS RL SOP-8 2.5Kpcs / 13 Reel TSM4946DCS RLG SOP-8 2.5Kpcs / 13 Reel Note: G denote for Green Product o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 4.5 A D Pulsed Drain Current I 30 A DM a,b Continuous Source Current (Diode Conduction) I 2 A S o Ta = 25 C 2.4 Maximum Power Dissipation P W D o Ta = 75 C 1.7 o Operating Junction Temperature T +150 C J o Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit o Junction to Case Thermal Resistance R 32 C/W JF o Junction to Ambient Thermal Resistance (PCB mounted) R 62.5 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 10 sec. 1/6 Version: B09 TSM4946D 60V Dual N-Channel MOSFET Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250uA BV 60 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1 -- 3 V DS GS D GS(TH) Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 60V, V = 0V I -- -- 2 A DS GS DSS a On-State Drain Current V = 5V, V = 10V I 20 -- -- A DS GS D(ON) V = 10V, I = 4.5A -- 45 55 GS D a Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 3.9A -- 55 75 GS D a Forward Transconductance V = 15V, I = 4.5A g -- 13 -- S DS D fs Diode Forward Voltage I = 2A, V = 0V V -- 0.9 1.2 V S GS SD b Dynamic Total Gate Charge Q -- 19 30 g V = 30V, I = 4.5A, DS D Gate-Source Charge Q -- 4 -- nC gs V = 10V GS Gate-Drain Charge Q -- 3 -- gd Input Capacitance C -- 910 -- iss V = 24V, V = 0V, DS GS pF Output Capacitance C -- 145 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 67 -- rss c Switching Turn-On Delay Time t -- 13 20 d(on) V = 30V, R = 30, DD L Turn-On Rise Time t -- 11 20 r I = 1A, V = 10V, nS D GEN Turn-Off Delay Time t -- 36 60 d(off) R = 6 G Turn-Off Fall Time t -- 11 20 f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 Version: B09