TSM4NB65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: Key Parameter Performance 1. Gate 2. Drain Parameter Value Unit 3. Source V 650 V DS R (max) 3.37 DS(on) Q g 13.46 nC TO-251 TO-252 (IPAK) (DPAK) Application Block Diagram Power Supply. Lighting Ordering Information Part No. Package Packing TSM4NB65CZ C0G TO-220 50pcs / Tube TSM4NB65CI C0G ITO-220 50pcs / Tube TSM4NB65CH C5G TO-251 75pcs / Tube TSM4NB65CP ROG TO-252 2.5kpcs / 13 Reel N-Channel MOSFET Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (T = 25 unless otherwise noted) C Limit Parameter Symbol Unit IPAK/DPAK ITO-220 TO-220 650 Drain-Source Voltage V V DS 30 Gate-Source Voltage V V GS 4 Tc = 25 A (Note 1) Continuous Drain Current I D 2.4 Tc = 100 A (Note 2) 16 Pulsed Drain Current I A DM (Note 3) Single Pulse Avalanche Energy E 31.2 mJ AS Total Power Dissipation T = 25 P 50 25 70 W C TOT Operating Junction Temperature T -55 to +150 J -55 to +150 Storage Temperature Range T STG Document Number: DS P0000112 1 Version: D15 TSM4NB65CZ C0G Not Recommended TSM4NB65 650V N-Channel Power MOSFET Thermal Performance Limit Parameter Symbol Unit IPAK/DPAK ITO-220 TO-220 Thermal Resistance - Junction to Case R 2.5 5 1.78 /W JC /W Thermal Resistance - Junction to Ambient R 83 62.5 62.5 JA Electrical Specifications (T =25 unless otherwise noted) A Parameter Conditions Symbol Min Typ Max Unit (Note 4) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 650 -- -- V GS D DSS Drain-Source On-State Resistance V = 10V, I = 2A R -- 2.7 3.37 GS D DS(ON) Gate Threshold Voltage V = V , I = 250A V 2.5 3.6 4.5 V DS GS D GS(TH) Zero Gate Voltage Drain Current V = 650V, V = 0V I -- -- 1 A DS GS DSS Gate Body Leakage V = 30V, V = 0V I -- -- 100 nA GS DS GSS Forward Transfer Conductance V = 40V, I = 2A g -- 2.6 -- S DS D fs (Note 5) Dynamic Total Gate Charge Q -- 13.46 -- g V = 480V, I = 4A, DS D Gate-Source Charge Q -- 2.98 -- nC gs V = 10V GS Gate-Drain Charge Q -- 6.66 -- gd Input Capacitance C -- 549 -- iss V = 25V, V = 0V, DS GS Output Capacitance C -- 75 -- oss pF f = 1.0MHz Reverse Transfer Capacitance C -- 18 -- rss (Note 6) Switching Turn-On Delay Time t -- 11 -- d(on) Turn-On Rise Time t -- 20 -- r V = 10V, I = 4A, GS D ns Turn-Off Delay Time V = 300V, R = 25 t -- 30 -- DD G d(off) Turn-Off Fall Time t -- 19 -- f (Note 4) Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in I -- -- 4 A S the MOSFET Source Current (Pulse) I -- -- 16 A SM Diode Forward Voltage I = 4A, V = 0V V -- -- 1.13 V S GS SD Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 10mH, I = 2.4A, V = 50V, R = 25, Starting T = 25 AS DD G J 4. Pulse test: PW 300s, duty cycle 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. Document Number: DS P0000112 2 Version: D15 TSM4NB65CZ C0G Not Recommended