SQM110N05-06L www.vishay.com Vishay Siliconix Automotive N-Channel 55 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 55 DS Definition R ( ) at V = 10 V 0.006 DS(on) GS TrenchFET Power MOSFET R ( ) at V = 4.5 V 0.010 DS(on) GS Package with Low Thermal Resistance I (A) 110 D c AEC-Q101 Qualified Configuration Single 100 % R and UIS Tested g D Compliant to RoHS Directive 2002/95/EC TO-263 G G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM110N05-06L-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 55 DS V Gate-Source Voltage V 20 GS T = 25 C 110 C Continuous Drain Current I D T = 125 C 64 C Continuous Source Current (Diode Conduction) I 120 A S a Pulsed Drain Current I 443 DM Single Pulse Avalanche Current I 61 AS L = 0.1 mH Single Pulse Avalanche Energy E 186 mJ AS T = 25 C 157 C a Maximum Power Dissipation P W D T = 125 C 52 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.95 thJC Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. When mounted on 1 square PCB (FR-4 material). c. Parametric verification ongoing. S11-2035-Rev. B, 17-Oct-11 Document Number: 68838 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQM110N05-06L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 55 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 55 V - - 1.0 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 55 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 55 V, T = 175 C - - 150 GS DS J a On-State Drain Current I V = 10 V V 5 V 120 - - A D(on) GS DS V = 10 V I = 30 A - 0.0047 0.006 GS D V = 10 V I = 30 A, T = 125 C - - 0.0105 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 30 A, T = 175 C - - 0.0132 GS D J V = 4.5 V I = 20 A - 0.008 0.010 GS D b Forward Transconductance g V = 15 V, I = 30 A - 90 - S fs DS D b Dynamic Input Capacitance C - 3550 4440 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz610765 pF oss GS DS Reverse Transfer Capacitance C -288360 rss c Total Gate Charge Q - 73 110 g c Gate-Source Charge Q -V = 10 V V = 28 V, I = 110 A14.5- nC gs GS DS D c Gate-Drain Charge Q -16.8- gd Gate Resistance R f = 1 MHz 0.62 1.2 1.85 g c Turn-On Delay Time t -12 18 d(on) c Rise Time t -13 20 r V = 28 V, R = 0.25 DD L ns c I 110 A, V = 10 V, R = 2.5 D GEN g Turn-Off Delay Time t -3756 d(off) c Fall Time t -1320 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - 443 A SM Forward Voltage V I = 85 A, V = 0 - 0.9 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2035-Rev. B, 17-Oct-11 Document Number: 68838 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000