MCH3322 Ordering number : ENN7994
P-Channel Silicon MOSFET
MCH3322 General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V --100 V
DSS
Gate-to-Source Voltage V 20 V
GSS
Drain Current (DC) I --0.6 A
D
Drain Current (Pulse) I PW 10s, duty cycle 1% --2.4 A
DP
2
Allowable Power Dissipation P Mounted on a ceramic board (900mm0.8mm) 1 W
D
Channel Temperature Tch 150 C
Storage Temperature Tstg --55 to +150 C
Electrical Characteristics at Ta=25C
Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V I =--1mA, V =0 --100 V
(BR)DSS D GS
Zero-Gate Voltage Drain Current I V =--100V, V =0 --1 A
DSS DS GS
Gate-to-Source Leakage Current I V =16V, V =0 10 A
GSS GS DS
Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V
GS DS D
Forward Transfer Admittance yfs V =--10V, I =--300mA 0.5 1.0 S
DS D
R (on)1 I =--300mA, V =--10V 1.1 1.45
DS D GS
Static Drain-to-Source On-State Resistance
R (on)2 I =--300mA, V =--4V 1.2 1.7
DS D GS
Input Capacitance Ciss V =--20V, f=1MHz 245 pF
DS
Output Capacitance Coss V =--20V, f=1MHz 16 pF
DS
Reverse Transfer Capacitance Crss V =--20V, f=1MHz 13 pF
DS
Turn-ON Delay Time t (on) See specified Test Circuit. 8.5 ns
d
Rise Time t See specified Test Circuit. 2.7 ns
r
Turn-OFF Delay Time t (off) See specified Test Circuit. 36 ns
d
Fall Time t See specified Test Circuit. 16 ns
f
Marking : JX Continued on next page.
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Jan-2011, Rev. 0 MCH3322/DMCH3322
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Total Gate Charge Qg V =--50V, V =--10V, I =--0.6A 7.0 nC
DS GS D
Gate-to-Source Charge Qgs V =--50V, V =--10V, I =--0.6A 1.0 nC
DS GS D
Gate-to-Drain Miller Charge Qgd V =--50V, V =--10V, I =--0.6A 1.0 nC
DS GS D
Diode Forward Voltage V I =--0.6A, V =0 --0.85 --1.2 V
SD S GS
Package Dimensions Switching Time Test Circuit
unit : mm
2167A
V = --50V
V
IN DD
0.3 0V
0.15
--10V
3
I = --0.3A
D
V
IN
R =167
L
D V
OUT
PW=10s
D.C.1%
2 1
0.65
G
2.0
3
(Bottom view) MCH3322
P.G
50
1 : Gate S
2 : Source
3 : Drain
12
(Top view)
SANYO : MCPH3
I -- V I -- V
D DS D GS
--0.6 --1.0
V = --10V
DS
--0.9
--0.5
--0.8
--0.7
--0.4
--0.6
--0.3 --0.5
--0.4
--0.2
--0.3
--0.2
--0.1
--0.1
0 0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5
Drain-to-Source Voltage, V -- V IT07478 Gate-to-Source Voltage, V -- V IT07479
DS GS
R (on) -- V R (on) -- Ta
DS GS DS
3.0 3.0
Ta=25C
I = --0.3A
D
2.5
2.5
2.0
2.0
1.5
1.5
1.0
1.0
0.5
0.5 0
0--2 --4---6-8--10 --12 --14 --16 --18 --20
--60 --40 --20 0 2040 60 80 100 120 140 160
Gate-to-Source Voltage, V -- V IT07480 Ambient Temperature, Ta -- C IT07481
GS
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V = --2.5V
GS
I = --0.3A, V = --10V
D GS
I = --0.3A, V = --4V
D GS
--3.0V
--3.5V
--4.0V
--8.0V
--10.0V
25C
Ta=75C
--25C
Static Drain-to-Source
On-State Resistance, R (on) -- Drain Current, I -- A
DS D
2.1
0.25 1.6 0.25
0.85 0.07
Static Drain-to-Source
On-State Resistance, R (on) -- Drain Current, I -- A
DS D