MCH3333 Ordering number : ENN7989 P-Channel Silicon MOSFET General-Purpose Switching Device MCH3333 Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V --30 V DSS Gate-to-Source Voltage V 10 V GSS Drain Current (DC) I --1.5 A D Drain Current (Pulse) I PW 10s, duty cycle 1% --6.0 A DP 2 Allowable Power Dissipation P Mounted on a ceramic board (900mm0.8mm) 0.9 W D Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0 --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0 --1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --0.4 --1.4 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--0.8A 1.38 2.3 S DS D R (on)1 I =--0.8A, V =--4V 215 280 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--0.4A, V =--2.5V 290 410 m DS D GS Input Capacitance Ciss V =--10V, f=1MHz 285 pF DS Output Capacitance Coss V =--10V, f=1MHz 52 pF DS Reverse Transfer Capacitance Crss V =--10V, f=1MHz 38 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 10 ns d Rise Time t See specified Test Circuit. 21 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 35 ns d Fall Time t See specified Test Circuit. 28 ns f Marking : YJ Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 MCH3333/DMCH3333 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Total Gate Charge Qg V =--10V, V =--4V, I =--1.5A 2.6 nC DS GS D Gate-to-Source Charge Qgs V =--10V, V =--4V, I =--1.5A 0.78 nC DS GS D Gate-to-Drain Miller Charge Qgd V =--10V, V =--4V, I =--1.5A 0.64 nC DS GS D Diode Forward Voltage V I =--1.5A, V =0 --0.89 --1.5 V SD S GS Package Dimensions Switching Time Test Circuit unit : mm 2167A V = --15V V IN DD 0.3 0.15 0V 3 --4V I = --0.8A D V IN R =18.75 L D V OUT PW=10s 2 1 D.C. 1% 0.65 G 2.0 3 (Bottom view) MCH3333 1 : Gate P.G 50 S 2 : Source 3 : Drain 12 (Top view) SANYO : MCPH3 I -- V I -- V D DS D GS --1.5 --2.0 V = --10V DS --1.8 --1.2 --1.6 --1.4 --0.9 --1.2 --1.0 --0.6 --0.8 --0.6 --0.3 --0.4 --0.2 V = --1.0V GS 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0--0.5 --1.0 --1.5 --2.0 --2.5 Drain-to-Source Voltage, V -- V IT07534 Gate-to-Source Voltage, V -- V IT07535 DS GS R (on) -- V R (on) -- Ta DS GS DS 800 500 Ta=25C 700 450 600 400 500 350 --0.8A 400 300 I = --0.4A D 300 250 200 200 100 150 0 100 0--2 --4--6 --8--10 --60 --40 --20 0 20 4060 80 100 120 140 160 Ambient Temperature, Ta -- C Gate-to-Source Voltage, V -- V IT07536 IT07537 GS Rev.0 I Page 2 of 4 I www.onsemi.com --1.5V I = --0.8A, V = --4.0V D GS I = --0.4A, V = --2.5V D GS --2.0V 25C --2.5V --3.0V Ta=75C --25C --3.5V --4.0V Static Drain-to-Source Drain Current, I -- A D On-State Resistance, R (on) -- m 2.1 DS 1.6 0.25 0.25 0.85 0.07 Static Drain-to-Source Drain Current, I -- A D On-State Resistance, R (on) -- m DS