MCH3478-TL-H ON Semiconductor

LOT No. LOT No. Ordering number : ENA1353B MCH3478 N-Channel Power MOSFET MCH3478 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 0.4 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =1A 1.2 2.0 S DS D R (on)1 I =1A, V =4.5V 125 165 m DS D GS Static Drain to Source On-State Resistance R (on)2 I =0.5A, V =2.5V 165 235 m DS D GS R (on)3 I =0.3A, V =1.8V 250 375 m DS D GS Input Capacitance Ciss 130 pF Output Capacitance Coss V =10V, f=1MHz 21 pF DS Reverse Transfer Capacitance Crss 14 pF Turn-ON Delay Time t (on) 4.4 ns d Rise Time t 8.7 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 16 ns d Fall Time t 12 ns f Total Gate Charge Qg 1.7 nC Gate to Source Charge Qgs V =10V, V =4.5V, I =2A 0.25 nC DS GS D Gate to Drain Miller Charge Qgd 0.38 nC Diode Forward Voltage V I =2A, V =0V 0.85 1.2 V SD S GS Switching Time Test Circuit V =15V DD V IN 4.5V I =1A D 0V R =15 L V D V IN OUT PW=10s D.C.1% G P.G 50 MCH3478 S Ordering Information Device Package Shipping memo MCH3478-TL-H MCPH3 3,000pcs./reel Pb Free and Halogen Free MCH3478-TL-W No. A1353-2/5