LOTNo. LOTNo. MCH3481 Power MOSFET 20V, 104m , 2A, Single N-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features V R (on) Max I DSS DS D Max Low On-Resistance 104m 4.5V 1.2V drive 147m 2.5V ESD Diode-Protected Gate 20V 2A 203m 1.8V Pb-Free, Halogen Free and RoHS compliance 540m 1.2V Typical Applications Load Switch ELECTRICAL CONNECTION N-Channel SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter SymbolValue Unit Drain to Source Voltage V 20V DSS Gate to Source Voltage V 9V GSS Drain Current (DC) I 2A D Drain Current (Pulse) I 8 A DP PW 10s, duty cycle 1% Power Dissipation When mounted on ceramic substrate P 0.8 W D 2 (900mm 0.8mm) Junction Temperature Tj 150 C PACKING TYPE : TL MARKING Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not FN be assumed, damage may occur and reliability may be affected. TL THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit ORDERING INFORMATION Junction to Ambient See detailed ordering and shipping R 156.2 C/W When mounted on ceramic substrate JA information on page 5 of this data sheet. 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : June 2015 - Rev. 1 MCH3481/D MCH3481 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =7.2V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 0.3 0.9V GS DS D Forward Transconductance g V =10V, I=1A 2.4 S FS DS D R (on)1 I =1A, V=4.5V 80 104m DS D GS 105 147 R (on)2 I =0.5A, V =2.5V m Static Drain to Source On-State DS D GS Resistance R (on)3 I =0.3A, V =1.8V 135 203 m DS D GS R (on)4 I =0.1A, V =1.2V 270 540 m DS D GS Input Capacitance Ciss 175 pF Output Capacitance Coss 30 pF V =10V, f=1MHz DS Reverse Transfer Capacitance Crss 25 pF Turn-ON Delay Time t (on) 6.6 ns d Rise Time 27 ns t r See specified Test Circuit Turn-OFF Delay Time 28 ns t (off) d Fall Time t 19 ns f Total Gate Charge Qg 2.9 nC Gate to Source Charge Qgs 0.46 nC V =10V, V =4.5V, I =2A DS GS D Gate to Drain Miller Charge Qgd 0.53 nC V Forward Diode Voltage SD I =2A, V=0V 0.85 1.2V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =10V IN DD 4.5V 0V I =1A D V IN R =10 L D V OUT PW=10s D.C.1% G MCH3481 P.G 50 S www.onsemi.com 2