MCH6351-TL-W ON Semiconductor

LOT No. LOT No. Ordering number : ENA2198 MCH6351 P-Channel Power MOSFET MCH6351 Electrical Characteristics at Ta = 25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =-1mA, V=0V -12 V BR DSS D GS Zero-Gate Voltage Drain Current I V =-12V, V=0V -1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Cutoff Voltage V(off) V =-6V, I=-1mA -0.4 -1.3V GS DS D Forward Transfer Admittance yfs V =-6V, I=-4.5A 16.5 S DS D R(on)1 I =-4.5A, V=-4.5V 14 16.9m DS D GS R(on)2 I =-2.0A, V=-2.5V 19 24m Static Drain to Source On-State DS D GS Resistance R(on)3 I =-1.0A, V=-1.8V 28 40m DS D GS R(on)4 I =-1.0A, V=-1.5V 37 74m DS D GS Input Capacitance Ciss 2200 pF Output Capacitance Coss V =-6V, f=1MHz 350 pF DS Reverse Transfer Capacitance Crss 320 pF Turn-ON Delay Time t (on) 12.3 ns d Rise Time t 89 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 260 ns d Fall Time t 122 ns f Total Gate Charge Qg 20.5 nC Gate to Source Charge Qgs V =-6V, V =-4.5V, I =-9A 4.2 nC DS GS D Gate to Drain Miller Charge Qgd 3.2 nC Diode Forward Voltage V I =-9A, V=0V -0.83 -1.2V SD S GS Switching Time Test Circuit No.A2198-2/6