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X-On Electronics has gained recognition as a prominent supplier of MCH6344-TL-W MOSFETs across the USA, India, Europe, Australia, and various other global locations. MCH6344-TL-W MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MCH6344-TL-W ON Semiconductor

MCH6344-TL-W electronic component of ON Semiconductor
MCH6344-TL-W ON Semiconductor
MCH6344-TL-W MOSFETs
MCH6344-TL-W  Semiconductors

Images are for reference only
See Product Specifications
Part No. MCH6344-TL-W
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PCH 4V Power MOSFET
Datasheet: MCH6344-TL-W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 6000
Multiples : 6000
6000 : USD 0.1249
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.4831
10 : USD 0.3911
100 : USD 0.2662
500 : USD 0.1996
1000 : USD 0.1497
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.359
10 : USD 0.2724
100 : USD 0.1483
1000 : USD 0.1114
3000 : USD 0.096
9000 : USD 0.0892
24000 : USD 0.0887
45000 : USD 0.0876
99000 : USD 0.0846
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCH6344-TL-W from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH6344-TL-W and other electronic components in the MOSFETs category and beyond.

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LOTNo. LOTNo. MCH6344 Power MOSFET 30V, 150m , 2A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 4V drive 150m 10V Pb-Free, Halogen Free and RoHS compliance 30V 255m 4.5V 2A 292m 4V Typical Applications Load Switch ELECTRICAL CONNECTION SPECIFICATIONS P-Channel ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) 1,2,5,6 Parameter SymbolValue Unit Drain to Source Voltage V 30 V DSS Gate to Source Voltage V 20 V GSS 1:Drain Drain Current (DC) I 2A D 2:Drain 3 Drain Current (Pulse) 3:Gate I 8 DP A 4:Source PW 10s, duty cycle 1% 5:Drain Power Dissipation 6:Drain When mounted on ceramic substrate P 0.8 4 D W 2 (900mm 0.8mm) Junction Temperature Tj 150 C PACKING TYPE : TL MARKING Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not YT be assumed, damage may occur and reliability may be affected. 2 : This product is designed to ESD immunity<200V*, so please take care when TL handling. *Machine Model ORDERING INFORMATION THERMAL RESISTANCE RATINGS See detailed ordering and shipping information on page 5 of this data sheet. Parameter SymbolValue Unit Junction to Ambient R 156.2 C/W When mounted on ceramic substrate JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : June 2015 - Rev. 3 MCH6344/D MCH6344 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transconductance g V =10V, I =1A 1.9 S FS DS D R (on)1 I =1A, V =10V 115 150m DS D GS Static Drain to Source On-State 182 255 R (on)2 I =0.5A, V =4.5V m DS D GS Resistance R (on)3 I =0.5A, V =4V 208 292 m DS D GS Input Capacitance Ciss 172 pF Output Capacitance Coss 51 pF V =10V, f=1MHz DS Reverse Transfer Capacitance Crss 36 pF Turn-ON Delay Time t (on) 4.5 ns d Rise Time t 4.2 ns r See specified Test Circuit Turn-OFF Delay Time 20 ns t (off) d Fall Time 10.6 ns t f Total Gate Charge Qg 3.9 nC Gate to Source Charge Qgs 0.6 nC V =15V, V =10V, I =2A DS GS D Gate to Drain Miller Charge Qgd 0.8 nC Forward Diode Voltage V SD I =2A, V=0V 0.86 1.5 V S GS Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =--15V V IN DD 0V --10V I =--1A D V IN R =15 L D V OUT PW=10s D.C.1% G MCH6344 P.G 50 S www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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