LOT No. LOT No. MCH5839 Power MOSFET 20V, 266m, 1.5A, Single P-Channel with Schottky Diode MCH5839 is a P-Channel Power MOSFET, with Schottky Diode for www.onsemi.com general-purpose switching device applications. Features Composite type with a P-Channel silicon MOSFET and a schottky MOSFET barrier diode contained in one package facilitating high-density mounting V R (on) Max I Max DSS DS D Pb-Free, Halogen Free and RoHS compliance 266m 4.5V MOSFET Low On-resistance 20V 413m 2.5V 1.5A ESD Diode-Protected Gate 645m 1.8V 1.8V drive SBD Short reverse recovery time SCHOTTKY DIODE Low forward voltage V V Max I RRM F FSM 15V 0.46V 3A Typical Applications DC/DC Converter ELECTRICAL CONNECTION P-Channel SPECIFICATIONS 5 4 ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter SymbolValue Unit 1:Gate MOSFET 2 : Source 3:Anode Drain to Source Voltage V 20 V DSS 4:Cathode Gate to Source Voltage V 10 V GSS 5:Drain Drain Current (DC) I 1.5 A D 132 Drain Current (Pulse) I 6 DP A PW 10 s, duty cycle 1% Power Dissipation PACKING TYPE : TL MARKING When mounted on ceramic substrate P 0.8 D W 2 (1000mm 0.8mm) 1unit YD Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +125 C TL SBD Repetitive Peak Reverse Voltage V 15V RRM Nonrepetitive Peak Reverse Surge Voltage V 15V ORDERING INFORMATION RSM See detailed ordering and shipping Average Output Current I 1A O information on page 6 of this data sheet. Surge Forward Current I 3 A FSM 50Hz sine wave, 1cycle Junction Temperature Tj 55 to +125 C Storage Temperature Tstg 55 to +125 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit Junction to Ambient R 156.2 C/W When mounted on ceramic substrate JA 2 (1000mm 0.8mm) 1unit Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : August 2015 - Rev. 1 MCH5839/D MCH5839 ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max MOSFET Drain to Source Breakdown Voltage V( ) I = 1mA, V =0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V = 20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V = 8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V = 10V, I = 1mA 0.4 1.4 V GS DS D Forward Transconductance g V = 10V, I = 750mA 1.9 S FS DS D R (on)1 I = 750mA, V = 4.5V 205 266m DS D GS Static Drain to Source On-State R (on)2 I = 300mA, V = 2.5V 295 413m DS D GS Resistance R (on)3 I = 100mA, V = 1.8V 430 645m DS D GS Input Capacitance Ciss 120 pF Output Capacitance Coss V = 10V, f=1MHz 26 pF DS Reverse Transfer Capacitance Crss 20 pF Turn-ON Delay Time t (on) 5.3 ns d Rise Time t 9.7 ns r See specified Test Circuit Turn-OFF Delay Time t(off) 16 ns d Fall Time t 14 ns f Total Gate Charge Qg 1.7 nC Gate to Source Charge Qgs V = 10V, V = 4.5V, I = 1.5A 0.28 nC DS GS D Gate to Drain Miller Charge Qgd 0.47 nC V Forward Diode Voltage SD I = 1.5A, V=0V 0.89 1.2 V S GS SBD Reverse Voltage V I=0.5mA 15 V R R Forward Voltage V I=0.5A 0.4 0.46V F F Reverse Current I V=6V 90 A R R Interterminal Capacitance C V =10V, f=1MHz 13 pF R Reverse Recovery Time t I =I =100mA, See specified Test Circuit 10 ns rr F R Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit t Test Circuit rr (MOSFET) (SBD) Duty10% V V = --10V DD IN 0V --4.5V I =--750mA D V 50 100 10 IN R =13.3 L D V OUT 10s PW=10s D.C.1% --5V G t rr MCH5839 P.G 50 S www.onsemi.com 2 100mA 100mA 10mA