X-On Electronics has gained recognition as a prominent supplier of MCH6103-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MCH6103-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MCH6103-TL-E ON Semiconductor

Name: MCH6103-TL-E
Brand: ON Semiconductor
SKU: MCH6103TLE_ON_Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

MCH6103-TL-E electronic component of ON Semiconductor

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Part No.	MCH6103-TL-E
Manufacturer:	ON Semiconductor
Category:	Bipolar Transistors - BJT
Description:	Bipolar Transistors - BJT BIP PNP 1A 50V
Datasheet:	MCH6103-TL-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.2458 ea
Line Total: USD 737.4

Availability - 0

MOQ: 3000 Multiples: 3000
Pack Size: 3000

MCH6103-TL-E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 02 May to Thu. 08 May MOQ : 3000 Multiples : 3000	3000 : USD 0.2458 6000 : USD 0.2451 9000 : USD 0.2445 12000 : USD 0.2439 15000 : USD 0.2434 24000 : USD 0.2428 30000 : USD 0.2421 75000 : USD 0.2415 150000 : USD 0.2408

0 Ship by Wed. 30 Apr to Fri. 02 May MOQ : 1 Multiples : 1	1 : USD 0.6461 10 : USD 0.5258 100 : USD 0.332 500 : USD 0.2499 1000 : USD 0.1877 3000 : USD 0.1543

We are delighted to provide the MCH6103-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH6103-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

LOT No. LOT No. LOT No. LOT No. Ordering number : EN6611B MCH6103/MCH6203 Bipolar Transistor MCH6103/MCH6203 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current I (--)1.0 A C Collector Current (Pulse) I (--)3 A CP Base Current I 200 mA B 2 Collector Dissipation P When mounted on ceramic substrate (600mm 0.8mm) 1.0 W C Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)100mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)300mA 420 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (9)6 pF CB V (sat)1 I =(--)500mA, I =(--)10mA (--280)130 (--430)190 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =(--)300mA, I =(--)6mA (--145)90 (--220)135 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)500mA, I =(--)10mA (--)0.81 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10 A, I =0A (--50)80 V (BR)CBO C E V I =(--)100A, R =0 (--50)80 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10 A, I =0A (--)5 V (BR)EBO E C Turn-On Time t (36)38 ns on Storage Time t See speci ed Test Circuit. (173)332 ns stg Fall Time t (28)40 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 50 + + 100 F 470 F V = --5V V =25V BE CC I =20I = --20I =500mA C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo MCH6103-TL-E MCPH6 3,000pcs./reel Pb Free MCH6203-TL-E MCPH6 3,000pcs./reel No.6611-2/8

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer ON Semiconductor ON Semiconductor
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS - XON Y Y
Mounting Style Smd/Smt Smd/Smt
Package / Case MCPH - 6 MCPH - 6
Transistor Polarity Pnp Pnp
Collector- Emitter Voltage VCEO Max 50 V 50 V
Emitter- Base Voltage VEBO 5 V 5 V
Pd - Power Dissipation 1 W 1 W
Series Mch6103 Mch6103
Packaging Cut Tape Cut Tape
Brand On Semiconductor On Semiconductor
Continuous Collector Current 1 A 1 A
Dc Collector/Base Gain Hfe Min 200 200
Product Type Bjts - Bipolar Transistors Bjts - Bipolar Transistors
Factory Pack Quantity : 3000 3000
Subcategory Transistors Transistors
Cnhts 8541210000 8541210000
Hts Code 8541290075 8541290075
Mxhts 85412101 85412101
Taric 8541210000 8541210000