LOTNo. LOTNo. MCH6337 Power MOSFET www.onsemi.com 20V, 49m , 4.5A, Single P-Channel Features Electrical Connection P-Channel Low On-Resistance High Speed Switching Low Gate Drive Voltage ESD Diode-Protected Gate 1,2,5,6 Pb-Free and RoHS Compliance Halogen Free Compliance : MCH6337-TL-H, MCH6337-TL-W 1:Drain 3 Specifications 2:Drain 3:Gate Absolute Maximum Ratings at Ta = 25C 4:Source Parameter Symbol Value Unit 5:Drain 6:Drain 4 Drain to Source Voltage V 20V DSS V Gate to Source Voltage V 10 GSS Drain Current (DC) I 4.5A Packing Type:TL Marking D Drain Current (Pulse) A I 18 DP PW10s, duty cycle1% Power Dissipation YL When mounted on ceramic substrate P 1.5W D 2 (1200mm 0.8mm) TL Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient When mounted on ceramic substrate R 83.3 C/W JA 2 (1200mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number : November 2014 - Rev. 2 MCH6337/D MCH6337 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 0.4 1.3V GS DS D Forward Transconductance g V =10V, I=3A 3.5 5.9 S FS DS D R(on)1 I =3A, V=4.5V 37 49m DS D GS Static Drain to Source On-State Resistance R(on)2 I =1.5A, V=2.5V 53 75m DS D GS R(on)3 I =0.5A, V=1.8V 85 130m DS D GS Input Capacitance Ciss 670 pF Output Capacitance Coss V =10V, f=1MHz 130 pF DS Reverse Transfer Capacitance Crss 94 pF Turn-ON Delay Time t (on) 8.4 ns d Rise Time t 45 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 69 ns d Fall Time t 63 ns f Total Gate Charge Qg 7.3 nC Gate to Source Charge Qgs V =10V, V =4.5V, I =4.5A 1.3 nC DS GS D Gate to Drain Miller Charge Qgd 2.1 nC Forward Diode Voltage V I =4.5A, V=0V 0.82 1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =--10V DD IN 0V --4.5V I =--3A D V IN R =3.33 L D V OUT PW=10s D.C.1% G MCH6337 P.G 50 S www.onsemi.com 2