X-On Electronics has gained recognition as a prominent supplier of MCH6341-TL-W MOSFETs across the USA, India, Europe, Australia, and various other global locations. MCH6341-TL-W MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MCH6341-TL-W ON Semiconductor

MCH6341-TL-W electronic component of ON Semiconductor
MCH6341-TL-W ON Semiconductor
MCH6341-TL-W MOSFETs
MCH6341-TL-W  Semiconductors

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See Product Specifications
Part No. MCH6341-TL-W
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET
Datasheet: MCH6341-TL-W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1038 ea
Line Total: USD 311.4 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 01 May to Wed. 07 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.223
6000 : USD 0.2208
9000 : USD 0.2185
12000 : USD 0.2164
15000 : USD 0.2141
24000 : USD 0.212
30000 : USD 0.2099
75000 : USD 0.2078
150000 : USD 0.2058

0
Ship by Thu. 01 May to Wed. 07 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1038
6000 : USD 0.0996
12000 : USD 0.0996
15000 : USD 0.0996
45000 : USD 0.0996

0
Ship by Thu. 01 May to Wed. 07 May
MOQ : 6000
Multiples : 6000
6000 : USD 0.1883

0
Ship by Tue. 29 Apr to Thu. 01 May
MOQ : 1
Multiples : 1
1 : USD 1.3788
10 : USD 0.6577
100 : USD 0.3579
500 : USD 0.2808
1000 : USD 0.2176
3000 : USD 0.1975
6000 : USD 0.1845
9000 : USD 0.1795

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the MCH6341-TL-W from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH6341-TL-W and other electronic components in the MOSFETs category and beyond.

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LOT No. LOT No. Ordering number : ENA1272B MCH6341 Power MOSFET MCH6341 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =--10V, I =--1mA --1.2 --2.6 V GS DS D g Forward Transconductance V =--10V, I =--3A 2.8 4.8 S FS DS D R (on)1 I =--3A, V =--10V 45 59 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1.5A, V =--4.5V 71 100 m DS D GS R (on)3 I =--1.5A, V =--4V 82 115 m DS D GS Input Capacitance Ciss 430 pF Output Capacitance Coss V =--10V, f=1MHz 105 pF DS Reverse Transfer Capacitance Crss 75 pF Turn-ON Delay Time t (on) 7.5 ns d Rise Time t 26 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 45 ns d Fall Time t 35 ns f Total Gate Charge Qg 10 nC Gate-to-Source Charge Qgs V =--15V, V =--10V, I =--5A 2.0 nC DS GS D Gate-to-Drain Miller Charge Qgd 2.5 nC Forward Diode Voltage V I =--5A, V =0V --0.87 --1.5 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V = --15V V IN DD 0V --10V I = --3A D V IN R =5 L V OUT PW=10s D.C.1% MCH6341 P.G 50 Ordering Information Device Package Shipping memo MCH6341-TL-E MCPH6 3,000pcs./reel Pb Free MCH6341-TL-H MCPH6 3,000pcs./reel Pb Free and Halogen Free MCH6341-TL-W MCPH6 3,000pcs./reel Pb Free and Halogen Free No. A1272-2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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