DMP56D0UFB-7 Diodes Incorporated

DMP56D0UFB Green P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D ESD Protected Gate V R (BR)DSS DS(ON) T = +25C A Low Input/Output Leakage -200mA 6 V = -4 V GS Fast Switching Speed -50V -160mA 8 V = -2.5V GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching DS(on) performance, making it ideal for high efficiency power management Case: X1-DFN1006-3 applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe DC-DC Converters Solderable per MIL-STD-202, Method 208 e4 Power Management Functions Terminal Connections: See Diagram Battery Operated Systems and Solid-State Relays Weight: 0.001 grams (Approximate) Drain Body X1-DFN1006-3 Diode Gate S D Gate Protection G Source Diode ESD PROTECTED Bottom View Top View Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP56D0UFB-7 X1-DFN1006-3 3,000/Tape & Reel DMP56D0UFB-7B X1-DFN1006-3 10,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See D3 D3 D3 DMP56D0UFB Marking Information From date code 1527 (YYWW), D3 D3 this changes to: Top View Top View Dot Denotes Drain Side Bar Denotes Gate and Source Side DMP56D0UFB-7 D3 Top View Bar Denotes Gate and Source Side D3 = Part Marking Code DMP56D0UFB-7B Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -50 V DSS Gate-Source Voltage 8 V VGSS Drain Current (Note 5) Steady -200 mA T = +25C I A D Pulsed Drain Current (Note 6) -700 mA I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 425 mW D 275 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 5) R A JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on FR-4 PCB. t 5 sec. 6. Pulse width 10S, Duty Cycle 1%. 2 of 7 DMP56D0UFB May 2015 Diodes Incorporated www.diodes.com Document number: DS36175 Rev. 3 - 2 D3 D3 D3 D3 D3 D3