DMN63D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET Low On-Resistance I D V R (BR)DSS DS(ON) Low Input Capacitance T = 25C A Fast Switching Speed 200mA 4.2 V = 4.5V GS 30V Small Surface Mount Package 260mA 2.8 V = 10V GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching DS(on) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: SOT363 Case Material: Molded Plastic. UL Flammability Classification Applications Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Matte Tin Finish annealed over Alloy 42 leadframe Power management functions (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Battery Operated Systems and Solid-State Relays Terminal Connections: See Diagram Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc Weight: 0.006 grams (approximate) D G S SOT363 2 1 1 S G D 2 2 1 ESD PROTECTED Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN63D8LDW-7 SOT363 3000/Tape & Reel DMN63D8LDW-13 SOT363 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN63D8LDW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C A 220 mA Continuous Drain Current (Note 5) V = 10V I GS D State 170 T = +70C A Steady T = +25C 260 A Continuous Drain Current (Note 6) V = 10V I mA GS D State 210 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 800 mA DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 300 Total Power Dissipation mW P D (Note 6) 400 (Note 5) 435 Thermal Resistance, Junction to Ambient R JA (Note 6) 330 C/W (Note 6) Thermal Resistance, Junction to Case 139 R JC Operating and Storage Temperature Range T T -55 to 150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 30V, V = 0V DSS DS GS Gate-Body Leakage I 10.0 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.8 1.5 V V = V , I = 250A GS(th) DS GS D 2.8 V = 10.0V, I = 250mA GS D 3.8 V = 5V, I = 250mA GS D Static Drain-Source On-Resistance 4.2 R V = 4.5V, I = 250mA DS (ON) GS D 4.5 V = 4.0V, I = 250mA GS D 13 V = 2.5V, I = 10mA GS D Forward Transconductance g 80 mS V = 10V, I = 0.115A FS DS D Diode Forward Voltage V - 0.8 1.2 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 22.0 iss Output Capacitance C 3.2 pF V = 25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance C 2.0 rss Gate Resistance R 79.9 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge V = 10V Q 0.87 GS g 0.43 Total Gate Charge V = 4.5V Q V = 10V, V = 30V, GS g GS DS nC Gate-Source Charge 0.11 I = 150mA Q D gs Gate-Drain Charge 0.11 Q gd Turn-On Delay Time t 3.3 D(on) Turn-On Rise Time t 3.2 V = 30V, I = 0.115A, V = 10V r DD D GEN , nS Turn-Off Delay Time t 12.0 R = 25 D(off) GEN Turn-Off Fall Time t 6.3 f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 November 2012 DMN63D8LDW Diodes Incorporated www.diodes.com Document number: DS36021 Rev. 3 - 2 NEW PRODUCT