DMT6008LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low R Ensures on State Losses Are Minimized DS(ON) I max D V R max (BR)DSS DS(ON) Excellent Q x R Product (FOM) gd DS (ON) T = +25C C Advanced Technology for DC/DC Converts 60A 7.5m V = 10V GS 60V Small Form Factor Thermally Efficient Package Enables Higher 11.5m V = 4.5V 49A GS Density End Products Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Description Smaller End Product This MOSFET has been designed to minimize the on-state resistance 100% UIS (Avalanche) rated (R ) and yet maintain superior switching performance, making it ESD Protected Gate DS(ON) ideal for high efficiency power management applications. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Applications Qualified to AEC-Q101 Standards for High Reliability Synchronous Rectifier Mechanical Data Backlighting Power Management Functions Case: POWERDI 3333-8 DC-DC Converters Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. e3 Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) Pin 1 S D S S G G D D ESD PROTECTED D D Gate Protection S Diode Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMT6008LFG-7 2,000/Tape & Reel POWERDI3333-8 DMT6008LFG-13 3,000/Tape & Reel POWERDI3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT6008LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 12 V GSS T = +25C 13 A A I D 11 T = +70C A Continuous Drain Current (Note 5) V = 10V GS 60 T = +25C C I A D T = +70C 48 C Maximum Continuous Body Diode Forward Current (Note 5) I 3 A S Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 80 A DM Avalanche Current (Note 6) 13 A I AS Avalanche Energy (Note 6) 25 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 2.2 A Total Power Dissipation (Note 5) P W D T = +25C 41 C Steady State 58 Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 35 C/W Thermal Resistance, Junction to Case (Note 5) R 3 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.7 2.0 V V = V , I = 250 A GS(th) DS GS D 5.0 7.5 V = 10V, I = 20A GS D Static Drain-Source On-Resistance 6.5 11.5 m R V = 4.5V, I = 20A DS(ON) GS D 19 V = 3V, I = 3A GS D Diode Forward Voltage 0.9 1.2 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 2713 C iss V = 30V, V = 0V, DS GS Output Capacitance 822 pF C oss f = 1.0MHz 57 Reverse Transfer Capacitance C rss 0.54 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz g DS GS 22.4 Total Gate Charge (V = 4.5V) Q GS g 50.4 Total Gate Charge (V = 10V) Q GS g nC V = 30V, I = 20A DS D 9.6 Gate-Source Charge Q gs 7.8 Gate-Drain Charge Q gd Turn-On Delay Time 7.0 t D(on) Turn-On Rise Time 4.4 t V = 30V, V = 10V, r DD GS nS Turn-Off Delay Time 24.4 I = 20A, R = 3 , t D G D(off) Turn-Off Fall Time 7.0 t f Notes: 5. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R is guaranteed by design JA JC while R is determined by the users board design. JA 6 .UIS in production with L = 0.3mH, T = +25C J 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 July 2014 DMT6008LFG Diodes Incorporated www.diodes.com Document number: DS36680 Rev. 2 - 2 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT