715869EB ON Semiconductor

MC74HC244A Octal 3-State Noninverting Buffer/Line Driver/ Line Receiver HighPerformance SiliconGate CMOS MC74HC244A MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage (Referenced to GND) 0.5 to +7.0 V CC due to high static voltages or electric V DC Input Voltage (Referenced to GND) 0.5 to V + 0.5 V in CC fields. However, precautions must be taken to avoid applications of any V DC Output Voltage (Referenced to GND) 0.5 to V + 0.5 V out CC voltage higher than maximum rated I DC Input Current, per Pin 20 mA voltages to this highimpedance cir- in cuit. For proper operation, V and in I DC Output Current, per Pin 35 mA out V should be constrained to the out range GND  (V or V )  V . I DC Supply Current, V and GND Pins 75 mA in out CC CC CC Unused inputs must always be I Input Clamp Current (V < 0 or V > V ) 20 mA IK I I CC tied to an appropriate logic voltage level (e.g., either GND or V ). I Output Clamp Current (V < 0 or V > V ) 20 mA CC OK O O CC Unused outputs must be left open. P Power Dissipation in Still Air, SOIC Package 500 mW D TSSOP Package 450 T Storage Temperature 65 to +150 C stg T Lead Temperature, 1 mm from Case for 10 Seconds C L (SOIC, SSOP or TSSOP Package) 260 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating: SOIC Package: 7 mW/C from 65 to 125C TSSOP Package: 6.1 mW/C from 65 to 125C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage (Referenced to GND) 2.0 6.0 V CC V , V DC Input Voltage, Output Voltage (Referenced to GND) 0 V V in out CC T Operating Temperature, All Package Types 55 +125 C A t , t Input Rise and Fall Time V = 2.0 V 0 1000 ns r f CC (Figure 1) V = 4.5 V 0 500 CC V = 6.0 V 0 400 CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.