X-On Electronics has gained recognition as a prominent supplier of BUL146 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BUL146 Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BUL146 ON Semiconductor

BUL146 electronic component of ON Semiconductor
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See Product Specifications
Part No.BUL146
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: BUL146 T0220 SMODE 700V 8A T/HOLE
Datasheet: BUL146 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.7569 ea
Line Total: USD 1.76 
Availability - 266
Ship by Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
266
Ship by Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 1.7569
25 : USD 0.8785
50 : USD 0.7906
75 : USD 0.6589
100 : USD 0.593

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUL146 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUL146 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BUL146G, BUL146FG SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146G / BUL146FG have an applications specific stateoftheart die designed for use in fluorescent electric lamp BUL146G, BUL146FG ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I = 100 mA, L = 25 mH) V 400 Vdc C CEO(sus) Collector Cutoff Current (V = Rated V , I = 0) I 100 Adc CE CEO B CEO Collector Cutoff Current (V = Rated V , V = 0) I 100 Adc CE CES EB CES (T = 125C) 500 C Collector Cutoff Current (V = 500 V, V = 0) (T = 125C) 100 CE EB C Emitter Cutoff Current (V = 9.0 Vdc, I = 0) I 100 Adc EB C EBO ON CHARACTERISTICS BaseEmitter Saturation Voltage (I = 1.3 Adc, I = 0.13 Adc) V 0.82 1.1 Vdc C B BE(sat) BaseEmitter Saturation Voltage (I = 3.0 Adc, I = 0.6 Adc) 0.93 1.25 C B CollectorEmitter Saturation Voltage (I = 1.3 Adc, I = 0.13 Adc) V 0.22 0.5 Vdc C B CE(sat) (T = 125C) 0.20 0.5 C CollectorEmitter Saturation Voltage (I = 3.0 Adc, I = 0.6 Adc) 0.30 0.7 C B (T = 125C) 0.30 0.7 C DC Current Gain (I = 0.5 Adc, V = 5.0 Vdc) h 14 34 C CE FE (T = 125C) 30 C DC Current Gain (I = 1.3 Adc, V = 1.0 Vdc) 12 20 C CE (T = 125C) 12 20 C DC Current Gain (I = 3.0 Adc, V = 1.0 Vdc) 8.0 13 C CE (T = 125C) 7.0 12 C DC Current Gain (I = 10 mAdc, V = 5.0 Vdc) 10 20 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth (I = 0.5 Adc, V = 10 Vdc, f = 1.0 MHz) f 14 MHz C CE T Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 95 150 pF CB E OB Input Capacitance (V = 8.0 V) C 1000 1500 pF EB IB 2.5 1.0 s (I = 1.3 Adc C (T = 125C) 6.5 C I = 300 mAdc B1 Dynamic Saturation Voltage: 0.6 V = 300 V) Determined 1.0 s and CC 3.0 s (T = 125C) 2.5 C 3.0 s respectively after V V CE(dsat) rising I reaches 90% of B1 3.0 1.0 s final I (I = 3.0 Adc B1 C (T = 125C) 7.0 C (see Figure 18) I = 0.6 Adc B1 0.75 V = 300 V) CC 3.0 s (T = 125C) 1.4 C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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