BUL146G, BUL146FG SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146G / BUL146FG have an applications specific stateoftheart die designed for use in fluorescent electric lamp BUL146G, BUL146FG ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I = 100 mA, L = 25 mH) V 400 Vdc C CEO(sus) Collector Cutoff Current (V = Rated V , I = 0) I 100 Adc CE CEO B CEO Collector Cutoff Current (V = Rated V , V = 0) I 100 Adc CE CES EB CES (T = 125C) 500 C Collector Cutoff Current (V = 500 V, V = 0) (T = 125C) 100 CE EB C Emitter Cutoff Current (V = 9.0 Vdc, I = 0) I 100 Adc EB C EBO ON CHARACTERISTICS BaseEmitter Saturation Voltage (I = 1.3 Adc, I = 0.13 Adc) V 0.82 1.1 Vdc C B BE(sat) BaseEmitter Saturation Voltage (I = 3.0 Adc, I = 0.6 Adc) 0.93 1.25 C B CollectorEmitter Saturation Voltage (I = 1.3 Adc, I = 0.13 Adc) V 0.22 0.5 Vdc C B CE(sat) (T = 125C) 0.20 0.5 C CollectorEmitter Saturation Voltage (I = 3.0 Adc, I = 0.6 Adc) 0.30 0.7 C B (T = 125C) 0.30 0.7 C DC Current Gain (I = 0.5 Adc, V = 5.0 Vdc) h 14 34 C CE FE (T = 125C) 30 C DC Current Gain (I = 1.3 Adc, V = 1.0 Vdc) 12 20 C CE (T = 125C) 12 20 C DC Current Gain (I = 3.0 Adc, V = 1.0 Vdc) 8.0 13 C CE (T = 125C) 7.0 12 C DC Current Gain (I = 10 mAdc, V = 5.0 Vdc) 10 20 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth (I = 0.5 Adc, V = 10 Vdc, f = 1.0 MHz) f 14 MHz C CE T Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 95 150 pF CB E OB Input Capacitance (V = 8.0 V) C 1000 1500 pF EB IB 2.5 1.0 s (I = 1.3 Adc C (T = 125C) 6.5 C I = 300 mAdc B1 Dynamic Saturation Voltage: 0.6 V = 300 V) Determined 1.0 s and CC 3.0 s (T = 125C) 2.5 C 3.0 s respectively after V V CE(dsat) rising I reaches 90% of B1 3.0 1.0 s final I (I = 3.0 Adc B1 C (T = 125C) 7.0 C (see Figure 18) I = 0.6 Adc B1 0.75 V = 300 V) CC 3.0 s (T = 125C) 1.4 C