D2225UK TT Electronics

TetraFET D2225UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED A N MULTI-PURPOSE SILICON 8 1 D 7 2 DMOS RF FET C B P 6 3 5W 12.5V 1GHz 5 4 PUSHPULL H K FEATURES M L SIMPLIFIED AMPLIFIER DESIGN J E FG SUITABLE FOR BROAD BAND APPLICATIONS SO8 PACKAGE VERY LOW C PIN 1 SOURCE PIN 5 SOURCE rss PIN 2 DRAIN 1 PIN 6 GATE 2 SIMPLE BIAS CIRCUITS PIN 3 DRAIN 2 PIN 7 GATE 1 PIN 4 SOURCE PIN 8 SOURCE LOW NOISE Dim. mm Tol. Inches Tol. A 4.06 0.08 0.160 0.003 HIGH GAIN 10 dB MINIMUM B 5.08 0.08 0.200 0.003 C 1.27 0.08 0.050 0.003 D 0.51 0.08 0.020 0.003 E 3.56 0.08 0.140 0.003 F 4.06 0.08 0.160 0.003 APPLICATIONS G 1.65 0.08 0.065 0.003 +0.25 +0.010 HF/VHF/UHF COMMUNICATIONS H 0.76 0.030 -0.00 -0.000 from 1MHz to 1GHz 0.51 Min. 0.020 Min. J 1.02 Max. 0.040 Max. K 45 Max. 45 Max. 0 Min. 0 Min. L 7 Max. 7 Max. M 0.20 0.08 0.008 0.003 N 2.18 Max. 0.086 Max. P 4.57 0.08 0.180 0.003 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) case P Power Dissipation 17.5W D BV Drain Source Breakdown Voltage 40V DSS BV Gate Source Breakdown Voltage 20V GSS I Drain Current 4A D(sat) T Storage Temperature 65 to 150C stg T Maximum Operating Junction Temperature 200C j Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Prelim. 2/99 E-mail: sales semelab.co.uk Website D2225UK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit PER SIDE DrainSource Breakdown BV V = 0 I = 10mA 40 V DSS GS D Voltage Zero Gate Voltage I V = 12.5V V = 0 1 mA DSS DS GS Drain Current I Gate Leakage Current V = 20V V = 0 1 m A GSS GS DS V Gate Threshold Voltage* I = 10mA V = V 0.5 7 V GS(th) D DS GS g Forward Transconductance* V = 10V I = 0.2A 0.18 S fs DS D TOTAL DEVICE G Common Source Power Gain P = 5W 10 dB PS O h Drain Efficiency V = 12.5V I = 0.2A 40 % DS DQ VSWR Load Mismatch Tolerance f = 1GHz 20:1 PER SIDE C Input Capacitance V = 0V V = 5V f = 1MHz 12 pF iss DS GS C Output Capacitance V = 12.5V V = 0 f = 1MHz 10 pF oss DS GS C Reverse Transfer Capacitance V = 12.5V V = 0 f = 1MHz 1 pF rss DS GS * Pulse Test: Pulse Duration = 300 m s , Duty Cycle 2% THERMAL DATA R Thermal Resistance Junction Case Max. 6C / W THjcase Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Prelim. 2/99 E-mail: sales semelab.co.uk Website