X-On Electronics has gained recognition as a prominent supplier of D2002UK RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. D2002UK RF MOSFET Transistors are a product manufactured by TT Electronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

D2002UK TT Electronics

D2002UK electronic component of TT Electronics
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Part No.D2002UK
Manufacturer: TT Electronics
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors Silicon DMOS RF FET 5W-28V- 1GHz SE
Datasheet: D2002UK Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 50
Multiples : 50
50 : USD 71.7213
100 : USD 70.9926
N/A

Obsolete
   
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We are delighted to provide the D2002UK from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the D2002UK and other electronic components in the RF MOSFET Transistors category and beyond.

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TetraFET D2002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED C MULTI-PURPOSE SILICON N (typ) 2 1 DMOS RF FET B A 5W 28V 1GHz 3 D (2 pls) SINGLE ENDED F (2 pls) H J FEATURES SIMPLIFIED AMPLIFIER DESIGN M E K I G SUITABLE FOR BROAD BAND APPLICATIONS DP LOW C rss PIN 1 SOURCE PIN 2 DRAIN PIN 3 GATE SIMPLE BIAS CIRCUITS LOW NOISE DIM mm Tol. Inches Tol. A 16.51 0.25 0.650 0.010 B 6.35 0.13 0.250 0.005 HIGH GAIN 13 dB MINIMUM C 45 5 45 5 D 3.30 0.13 0.130 0.005 E 18.92 0.08 0.745 0.003 F 1.52 0.13 0.060 0.005 G 2.16 0.13 0.085 0.005 APPLICATIONS H 14.22 0.08 0.560 0.003 I 1.52 0.13 0.060 0.005 VHF/UHF COMMUNICATIONS J 6.35 0.13 0.250 0.005 from DC to 1 GHz K 0.13 0.03 0.005 0.001 M 5.08 0.51 0.200 0.020 N 1.27 x 45 0.13 0.050 x 45 0.005 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) case P Power Dissipation 29W D BV Drain Source Breakdown Voltage 65V DSS BV Gate Source Breakdown Voltage 20V GSS I Drain Current 2A D(sat) T Storage Temperature 65 to 150C stg T Maximum Operating Junction Temperature 200C j Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 3500 E-mail: sales semelab.co.uk Website: D2002UK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit DrainSource BV V = 0 I = 10mA 65 V DSS GS D Breakdown Voltage Zero Gate Voltage I V = 28V V = 0 2 mA DSS DS GS Drain Current I Gate Leakage Current V = 20V V = 0 1 A GSS GS DS V Gate Threshold Voltage* I = 10mA V = V 17 V GS(th) D DS GS g Forward Transconductance* V = 10V I = 0.4A 0.36 S fs DS D G Common Source Power Gain P = 5W 13 dB PS O Drain Efficiency V = 28V I = 0.2A 40 % DS DQ VSWR Load Mismatch Tolerance f = 1GHz 20:1 C Input Capacitance V = 0 V = 5V f = 1MHz 24 pF iss DS GS C Output Capacitance V = 28V V = 0 f = 1MHz 12 pF oss DS GS C Reverse Transfer Capacitance V = 28V V = 0 f = 1MHz 1 pF rss DS GS * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA R Thermal Resistance Junction Case Max. 6.0C / W THjcase Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 3500 E-mail: sales semelab.co.uk Website:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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