X-On Electronics has gained recognition as a prominent supplier of MHT1006NT1 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MHT1006NT1 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MHT1006NT1 NXP

MHT1006NT1 electronic component of NXP
Images are for reference only
See Product Specifications
Part No.MHT1006NT1
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors 728-2700 MHz 1.26 W Avg. 28 V
Datasheet: MHT1006NT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 20.6461
10 : USD 19.2037
25 : USD 18.0537
1000 : USD 18.042
N/A

Obsolete
   
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RoHS - XON
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We are delighted to provide the MHT1006NT1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MHT1006NT1 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MHT1006N FreescaleSemiconductor Rev. 1, 12/2015 TechnicalData RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET RF power transistor suitable for industrial heating applications from 728 to MHT1006NT1 2700MHz. Deviceis capableof bothCW andpulseoperation. 2300MHz Typical Single--Carrier W--CDMA Performance: V =28Vdc,I =90mA, DD DQ P = 1.26W Avg., Input Signal PAR = 9.9dB 0.01%Probability on out (1) CCDF. 7282700MHz,10WCW,28V INDUSTRIALHEATING,RUGGED G OutputPAR ACPR IRL ps D RFPOWERLDMOSTRANSISTOR Frequency (dB) (%) (dB) (dBc) (dB) 2300MHz 21.2 23.6 9.0 40.9 10 2350MHz 21.6 22.6 8.6 40.0 22 2400MHz 20.7 21.0 8.3 40.1 9 Features Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation PLD--1.5W Designedfor Digital PredistortionError CorrectionSystems PLASTIC Universal BroadbandDrivenDevicewithInternal RF Feedback RF /V in GS RF /V out DS (Top View) Note: Thecenterpadonthebacksideofthe packageisthesourceterminalforthe transistor. Figure1.PinConnections 1. Alldata measured in fixture withdevicesolderedtoheatsink. FreescaleSemiconductor, Inc., 20142015. All rights reserved. MHT1006NT1 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5,+65 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS Operating Voltage V 32,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+150 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 3.7 C/W JC CaseTemperature81C,10W CW,28Vdc,I =90mA,2140MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1B MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) III Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =12.1 Adc) DS D GateQuiescentVoltage V 1.5 1.8 2.3 Vdc GS(Q) (V =28Vdc,I =90mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =6Vdc,I =121mAdc) GS D 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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