DocumentNumber:MHT1006N FreescaleSemiconductor Rev. 1, 12/2015 TechnicalData RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET RF power transistor suitable for industrial heating applications from 728 to MHT1006NT1 2700MHz. Deviceis capableof bothCW andpulseoperation. 2300MHz Typical Single--Carrier W--CDMA Performance: V =28Vdc,I =90mA, DD DQ P = 1.26W Avg., Input Signal PAR = 9.9dB 0.01%Probability on out (1) CCDF. 7282700MHz,10WCW,28V INDUSTRIALHEATING,RUGGED G OutputPAR ACPR IRL ps D RFPOWERLDMOSTRANSISTOR Frequency (dB) (%) (dB) (dBc) (dB) 2300MHz 21.2 23.6 9.0 40.9 10 2350MHz 21.6 22.6 8.6 40.0 22 2400MHz 20.7 21.0 8.3 40.1 9 Features Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation PLD--1.5W Designedfor Digital PredistortionError CorrectionSystems PLASTIC Universal BroadbandDrivenDevicewithInternal RF Feedback RF /V in GS RF /V out DS (Top View) Note: Thecenterpadonthebacksideofthe packageisthesourceterminalforthe transistor. Figure1.PinConnections 1. Alldata measured in fixture withdevicesolderedtoheatsink. FreescaleSemiconductor, Inc., 20142015. All rights reserved. MHT1006NT1 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5,+65 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS Operating Voltage V 32,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+150 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 3.7 C/W JC CaseTemperature81C,10W CW,28Vdc,I =90mA,2140MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1B MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) III Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =12.1 Adc) DS D GateQuiescentVoltage V 1.5 1.8 2.3 Vdc GS(Q) (V =28Vdc,I =90mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =6Vdc,I =121mAdc) GS D 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat