DocumentNumber:MMRF1006H FreescaleSemiconductor Rev. 0, 12/2013 TechnicalData RFPowerFieldEffectTransistors MMRF1006HR5 N--Channel Enhancement--ModeLateral MOSFETs MMRF1006HSR5 Designed for pulse and CW wideband applications with frequencies up to 500MHz. Devices areunmatchedandaresuitableforuseincommunications, radar andindustrial applications. 10--500MHz,1000W,50V LATERALN--CHANNEL Typical PulsePerformanceat 450MHz: V =50Vdc,I = 150mA, DD DQ BROADBAND P = 1000W Peak (200W Avg.), PulseWidth= 100 sec, out Duty Cycle= 20% RFPOWERMOSFETs Power Gain 20dB Drain Efficiency 64% Capableof Handling10:1VSWR 50Vdc, 450MHz, 1000W Peak Power Features CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters CW OperationCapability withAdequateCooling NI--1230H--4S QualifiedUptoaMaximum of 50V Operation DD MMRF1006HR5 IntegratedESD Protection Designedfor Push--Pull Operation Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation InTapeandReel. R5Suffix = 50Units, 56mm TapeWidth, 13--inchReel. NI--1230S--4S MMRF1006HSR5 PARTSAREPUSH--PULL RF /V31 RF /V inA GSA outA DSA RF /V42 RF /V inB GSB outB DSB (Top View) Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5,+110 Vdc DSS Gate--SourceVoltage V --6, +10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1) OperatingJunctionTemperature T 225 C J (2) TotalDeviceDissipation T =25 C, CW only P 1333 W C D 1. Continuous useat maximum temperaturewillaffect MTTF. 2. RefertoFig. 12, Transient ThermalImpedance, forinformationtocalculatevalue forpulsed operation. FreescaleSemiconductor, Inc., 2013. All rights reserved. MMRF1006HR5MMRF1006HSR5 RF DeviceData FreescaleSemiconductor, Inc. 1Table2.ThermalCharacteristics (1) Characteristic Symbol Value Unit ThermalImpedance,JunctiontoCase Z 0.03 C/W JC Pulse: CaseTemperature80C,1000W Peak,100 sec PulseWidth,20%Duty Cycle, (2) 450MHz ThermalResistance,JunctiontoCase R 0.15 C/W JC CW: CaseTemperature84C, 1000W CW, 352.2MHz Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2000V MachineModel(perEIA/JESD22--A115) A,passes 125V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (3) OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (I =300mA,V =0Vdc) D GS Zero Gate Voltage Drain Leakage Current I 100 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 5 mA DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (3) GateThresholdVoltage V 1 1.68 3 Vdc GS(th) (V =10Vdc,I =1600 Adc) DS D (4) GateQuiescentVoltage V 1.5 2.2 3.5 Vdc GS(Q) (V =50Vdc,I =150mAdc,MeasuredinFunctionalTest) DD D (3) Drain--SourceOn--Voltage V 0.28 Vdc DS(on) (V =10Vdc,I =4Adc) GS D (3) DynamicCharacteristics ReverseTransferCapacitance C 3.3 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 147 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 506 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS (4) FunctionalTests (In Freescale Test Fixture, 50 ohm system) V =50Vdc,I = 150 mA, P = 1000 W Peak (200 W Avg.), f = 450 MHz, DD DQ out 100 sec Pulse Width, 20% Duty Cycle PowerGain G 19 20 22 dB ps Drain Efficiency 60 64 % D Input ReturnLoss IRL --18 --9 dB 1. RefertoAN1955, ThermalMeasurement Methodology of RF Power Amplifiers. Goto