DocumentNumber:MMRF1008H
FreescaleSemiconductor
Rev. 0, 12/2013
TechnicalData
RFPowerFieldEffectTransistors
MMRF1008HR5
N--Channel Enhancement--ModeLateral MOSFETs
MMRF1008HSR5
RF power transistors designed for applications operating at frequencies
from900to1215MHz.Thesedevicesaresuitableforuseindefenseand
commercialpulseapplications, suchas IFF andDME.
TypicalPulsePerformance: V =50Vdc,I = 100mA, P =
DD DQ out 960--1215MHz,275W,50V
275W Peak (27.5Watts Avg.), f = 1030MHz, PulseWidth= 128 sec,
PULSE
Duty Cycle= 10%
LATERALN--CHANNEL
Power Gain 20.3dB
RFPOWERMOSFETs
DrainEfficiency 65.5%
Capableof Handling10:1VSWR, @ 50Vdc, 1030MHz, 275W Peak Power
TypicalBroadbandPerformance: V =50Vdc,I = 100mA, P =
DD DQ out
250W Peak (25Watts Avg.), f = 960--1215MHz, PulseWidth=
128 sec, Duty Cycle= 10%
Power Gain 19.8dB
DrainEfficiency 58%
NI--780H--2L
Features
MMRF1008HR5
CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters
Internally Matchedfor Easeof Use
QualifiedUptoaMaximum of 50V Operation
DD
IntegratedESD Protection
Greater NegativeGate--SourceVoltageRangefor ImprovedClass C
NI--780S--2L
Operation
MMRF1008HSR5
InTapeandReel. R5Suffix = 50Units, 56mm TapeWidth, 13--inchReel.
Table1.MaximumRatings
Rating Symbol Value Unit
Drain--SourceVoltage V --0.5,+100 Vdc
DSS
Gate--SourceVoltage V --6.0,+10 Vdc
GS
StorageTemperatureRange T --65to+150 C
stg
CaseOperatingTemperature T 150 C
C
(1)
OperatingJunctionTemperature T 225 C
J
Table2.ThermalCharacteristics
(2)
Characteristic Symbol Value Unit
ThermalResistance,JunctiontoCase
CaseTemperature80C,275W Peak 128 sec PulseWidth,10%Duty Cycle Z 0.08 C/W
JC
1. Continuous useatmaximum temperaturewillaffectMTTF.
2. RefertoAN1955, ThermalMeasurement Methodology of RF Power Amplifiers. GotoTable3.ESDProtectionCharacteristics
TestMethodology Class
HumanBody Model(perJESD22--A114) 2
MachineModel(perEIA/JESD22--A115) B
ChargeDeviceModel(perJESD22--C101) IV
Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted)
A
Characteristic Symbol Min Typ Max Unit
OffCharacteristics
Gate--SourceLeakageCurrent I 10 Adc
GSS
(V =5Vdc,V =0Vdc)
GS DS
Drain--SourceBreakdownVoltage V 110 Vdc
(BR)DSS
(V =0Vdc,I =100mA)
GS D
ZeroGateVoltageDrainLeakageCurrent I 10 Adc
DSS
(V =50Vdc,V =0Vdc)
DS GS
ZeroGateVoltageDrainLeakageCurrent I 100 Adc
DSS
(V =90Vdc,V =0Vdc)
DS GS
OnCharacteristics
GateThresholdVoltage V 0.9 1.7 2.4 Vdc
GS(th)
(V =10Vdc,I =662 Adc)
DS D
GateQuiescentVoltage V 1.7 2.4 3.2 Vdc
GS(Q)
(V =50Vdc,I =100mAdc,MeasuredinFunctionalTest)
DD D
Drain--SourceOn--Voltage V 0.25 Vdc
DS(on)
(V =10Vdc,I =1.6Adc)
GS D
(1)
DynamicCharacteristics
ReverseTransferCapacitance C 0.46 pF
rss
(V =50Vdc 30mV(rms)ac @1MHz,V =0Vdc)
DS GS
OutputCapacitance C 352 pF
oss
(V =50Vdc 30mV(rms)ac @1MHz,V =0Vdc)
DS GS
InputCapacitance C 695 pF
iss
(V =50Vdc,V =0Vdc 30mV(rms)ac @1MHz)
DS GS
FunctionalTests(InFreescaleTestFixture,50ohm system)V =50Vdc,I =100mA,P =275W Peak (27.5W Avg.),f=1030MHz,
DD DQ out
Pulse,128 sec PulseWidth,10%Duty Cycle
PowerGain G 19 20.3 22 dB
ps
DrainEfficiency 63 65.5 %
D
InputReturnLoss IRL --14 --9 dB
TypicalBroadbandPerformance960--1215MHz (InFreescale960--1215MHz TestFixture,50ohm system)V =50Vdc,
DD
I =100mA,P =250W Peak (25W Avg.),f=960--1215MHz,Pulse,128 sec PulseWidth,10%Duty Cycle
DQ out
PowerGain G 19.8 dB
ps
DrainEfficiency 58 %
D
1. Partinternally matchedbothoninputandoutput.
MMRF1008HR5MMRF1008HSR5
RF DeviceData
FreescaleSemiconductor, Inc.
2