X-On Electronics has gained recognition as a prominent supplier of MHT1008NT1 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MHT1008NT1 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MHT1008NT1 NXP

MHT1008NT1 electronic component of NXP
Images are for reference only
See Product Specifications
Part No.MHT1008NT1
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 12.5 W CW, 28 V
Datasheet: MHT1008NT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 26.334
10 : USD 24.2172
25 : USD 22.7648
1000 : USD 22.7527
N/A

Obsolete
   
Manufacturer
Product Category
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Type
Brand
Number Of Channels
Product Type
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MHT1008NT1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MHT1008NT1 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MHT1008N FreescaleSemiconductor Rev. 0, 5/2016 TechnicalData RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET MHT1008N This 12.5W CW highefficiency RF power transistor is designed for consumer andcommercial cookingapplications operatinginthe2450MHz ISM band. TypicalPerformance: V =28Vdc,I =110mA DD DQ 2450MHz,12.5WCW,28V Frequency G PAE P ps out RFPOWERLDMOSTRANSISTOR (MHz) SignalType (dB) (%) (W) FORCONSUMERAND COMMERCIALCOOKING 2400 CW 18.5 57.5 12.5 2450 18.6 56.3 12.5 2500 18.3 55.6 12.5 LoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (dBm) Voltage Result PLD--1.5W PLASTIC 2450 CW >5:1 26 32 NoDevice atallPhase (3 dB Degradation Angles Overdrive) Features Characterizedwithseries equivalent large--signal impedanceparameters and Gate Drain commonsourceS--parameters Qualifiedfor operationat 32Vdc IntegratedESD protection (Top View) 150C caseoperatingtemperature Note: Thecenterpadonthebacksideofthe 150C dietemperaturecapability packageisthesourceterminalforthe transistor. TargetApplications Figure1.PinConnections Consumer cookingas PA driver Commercialcookingas PA driver FreescaleSemiconductor, Inc., 2016. All rights reserved. MHT1008N RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5,+65 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS Operating Voltage V 32,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+150 C J TotalDeviceDissipation T =25 C P 48.1 W C D Derateabove25 C 0.38 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 2.6 C/W JC CaseTemperature88C,12.5W CW,28Vdc,I =110mA,2450MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1B,passes 500V MachineModel(perEIA/JESD22--A115) A,passes 50V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel(MSL) TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =32Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =15.4 Adc) DS D GateQuiescentVoltage V 1.8 Vdc GS(Q) (V =28Vdc,I =90mAdc) DS D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =154mAdc) GS D 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailable at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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