D2203UK TT Electronics

TetraFET D2203UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED B MULTI-PURPOSE SILICON H C DMOS RF FET G 2 3 1 5W 12.5V 1GHz A D E 54 PUSHPULL F I FEATURES SIMPLIFIED AMPLIFIER DESIGN NMKO J SUITABLE FOR BROAD BAND APPLICATIONS DQ VERY LOW C PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 rss PIN 3 DRAIN 2 PIN 4 GATE 2 SIMPLE BIAS CIRCUITS PIN 5 GATE 1 DIM mm Tol. Inches Tol. LOW NOISE A 16.38 0.26 0.645 0.010 B 1.52 0.13 0.060 0.005 C 45 5 45 5 HIGH GAIN 10 dB MINIMUM D 6.35 0.13 0.250 0.005 E 3.30 0.13 0.130 0.005 F 14.22 0.13 0.560 0.005 G 1.27 x 45 0.13 0.05 x 45 0.005 H 1.52 0.13 0.060 0.005 APPLICATIONS I 6.35 0.13 0.250 0.005 J 0.13 0.02 0.005 0.001 VHF/UHF COMMUNICATIONS K 2.16 0.13 0.085 0.005 from 1MHz to 1 GHz M 1.52 0.13 0.060 0.005 N 5.08 MAX 0.200 MAX O 18.90 0.13 0.744 0.005 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) case P Power Dissipation 35W D BV Drain Source Breakdown Voltage * 40V DSS BV Gate Source Breakdown Voltage * 20V GSS I Drain Current * 2A D(sat) T Storage Temperature 65 to 150C stg T Maximum Operating Junction Temperature 200C j * Per Side Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 2626 E-mail: sales semelab.co.uk Website: D2203UK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit PER SIDE DrainSource Breakdown BV V = 0 I = 10mA 40 V DSS GS D Voltage Zero Gate Voltage I V = 12.5V V = 0 1 mA DSS DS GS Drain Current I Gate Leakage Current V = 20V V = 0 1 A GSS GS DS V Gate Threshold Voltage* I = 10mA V = V 17 V GS(th) D DS GS g Forward Transconductance* V = 10V I = 0.2A 0.18 S fs DS D TOTAL DEVICE G Common Source Power Gain P = 5W 10 dB PS O Drain Efficiency V = 12.5V I = 0.2A 40 % DS DQ VSWR Load Mismatch Tolerance f = 1GHz 20:1 PER SIDE C Input Capacitance V = 12.5V V = 5V f = 1MHz 12 pF iss DS GS C Output Capacitance V = 12.5V V = 0 f = 1MHz 10 pF oss DS GS C Reverse Transfer Capacitance V = 12.5V V = 0 f = 1MHz 1 pF rss DS GS * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA R Thermal Resistance Junction Case Max. 5.0C / W THjcase Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 2626 E-mail: sales semelab.co.uk Website: